Invention Grant
- Patent Title: Deposition of layer using depositing apparatus with reciprocating susceptor
- Patent Title (中): 使用具有往复式基座的沉积设备沉积层
-
Application No.: US13273076Application Date: 2011-10-13
-
Publication No.: US08771791B2Publication Date: 2014-07-08
- Inventor: Sang In Lee , Chang Wan Hwang
- Applicant: Sang In Lee , Chang Wan Hwang
- Applicant Address: US CA Fremont
- Assignee: Veeco ALD Inc.
- Current Assignee: Veeco ALD Inc.
- Current Assignee Address: US CA Fremont
- Agency: Fenwick & West LLP
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C23C16/40

Abstract:
Atomic layer deposition is performed by reciprocating a susceptor in two directions, subjecting a substrate on the susceptor to two different sequences of processes. By subjecting the susceptor to different sequences of processes, the substrate undergoes different processes that otherwise would have required an additional set of injectors or reactors. The reduced number of injectors or reactors enables a more compact deposition device, and reduces the cost associated with the deposition device.
Public/Granted literature
- US20120094149A1 DEPOSITION OF LAYER USING DEPOSITING APPARATUS WITH RECIPROCATING SUSCEPTOR Public/Granted day:2012-04-19
Information query
IPC分类: