发明授权
US08778199B2 Epitaxial lift off in inverted metamorphic multijunction solar cells 有权
倒置变质多结太阳能电池外延提升

Epitaxial lift off in inverted metamorphic multijunction solar cells
摘要:
The present disclosure provides a process for manufacturing a solar cell by selectively freeing an epitaxial layer from a single crystal substrate upon which it was grown. In some embodiments the process includes, among other things, providing a first substrate; depositing a separation layer on said first substrate; depositing on said separation layer a sequence of layers of semiconductor material forming a solar cell; mounting and bonding a flexible support on top of the sequence of layers; etching said separation layer while applying an agitating action to the etchant solution so as to remove said flexible support with said epitaxial layer from said first substrate.
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