公开(公告)号：US12224367B2

公开(公告)日：2025-02-11

申请号：US16288932

申请日：2019-02-28

Applicant: KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION

Inventor： Soichiro Shibasaki ,  Mutsuki Yamazaki ,  Naoyuki Nakagawa ,  Sara Yoshio ,  Kazushige Yamamoto

IPC: H01L31/0725 ,  H01L31/0224 ,  H01L31/032 ,  H01L31/042 ,  H02S10/20

Abstract: According to one embodiment, a solar cell includes a first electrode, a second electrode, and a photoelectric conversion layer disposed between the first electrode and the second electrode. In a case where a photoluminescence spectrum of the photoelectric conversion layer is measured at a temperature of 100 K or lower, a first maximum value (A) which is a maximum value of emission intensity in a wavelength range of more than 650 nm and 1000 nm or less is 100 times or less of a second maximum value (B) which is a maximum value of emission intensity in a wavelength range of 600 nm or more and 650 nm or less (A≤100B).

公开(公告)号：US20250037942A1

公开(公告)日：2025-01-30

申请号：US18917170

申请日：2024-10-16

Applicant: UNIVERSITY OF PITTSBURGH-OF THE COMMONWEALTH SYSTEM OF HIGHER EDUCATION

Inventor： Jung-Kun Lee ,  Gillsang Han

IPC: H01G9/20 ,  H01G9/00 ,  H01L31/0725 ,  H10K30/35 ,  H10K30/82

Abstract: Various perovskite solar cell embodiments include a flexible metal substrate (e.g., including a metal doped TiO2 layer), a perovskite layer, and a transparent electrode layer (e.g., including a dielectric/metal/dielectric structure), wherein the perovskite layer is provided between the flexible metal substrate and the transparent electrode layer. Also, various tandem solar cell embodiments including a perovskite solar cell and either a quantum dot solar cell, and organic solar cell or a thin film solar cell.

公开(公告)号：US20240234611A1

公开(公告)日：2024-07-11

申请号：US18432626

申请日：2024-02-05

Applicant: SolAero Technologies Corp.

Inventor： Arthur Cornfeld ,  Jeff Stainfeldt

IPC: H01L31/0725 ,  H01L31/0304 ,  H01L31/048 ,  H01L31/0687 ,  H01L31/18

CPC classification number: H01L31/0725 ,  H01L31/0304 ,  H01L31/03046 ,  H01L31/03048 ,  H01L31/048 ,  H01L31/06875 ,  H01L31/184 ,  H01L31/1844 ,  H01L31/1848 ,  H01L31/1856 ,  H01L31/1892 ,  Y02E10/544 ,  Y02P70/50

Abstract: A solar cell fabricated from a semiconductor growth substrate; that is sub sequentially removed a sequence of layers of semiconductor material grown on the semiconductor growth substrate forming the solar cell; a metal contact layer deposited over the sequence of layers; of a permanent supporting substrate being affixed directly over the metal contact layer and permanently bonded thereto.

公开(公告)号：US12027638B2

公开(公告)日：2024-07-02

申请号：US18159736

申请日：2023-01-26

Applicant: Airbus Defence and Space GmbH

Inventor： Claus Zimmermann

IPC: H01L31/054 ,  H01L31/0304 ,  H01L31/048 ,  H01L31/0725 ,  H01L31/18

CPC classification number: H01L31/0547 ,  H01L31/0304 ,  H01L31/03046 ,  H01L31/0725 ,  H01L31/1844 ,  H01L31/048 ,  H01L31/1892

Abstract: A photovoltaic assembly dual junction solar cell for space use including a solar cell stack including first and second subcells stacked on each other and each including an epitaxially grown light absorbing layer. The first subcell is adjacent to a solar cell stack front, light-receiving surface and the second subcell is adjacent to a solar cell stack rear surface. The first subcell light absorbing layer has a larger bandgap than the second subcell light absorbing layer. A light reflecting element positioned adjacent to a second subcell light absorbing layer rear side is configured to reflect photons having an energy smaller than the bandgap energy of the second subcell light absorbing layer and/or photons having an energy larger than the bandgap energy of the second subcell light absorbing layer and smaller than the bandgap energy of the first subcell light absorbing layer with a reflectivity of at least 90%.

公开(公告)号：US11967663B2

公开(公告)日：2024-04-23

申请号：US17347486

申请日：2021-06-14

Applicant: Richard R. King

Inventor： Richard R. King

IPC: H01L31/0725 ,  H01L31/073 ,  H01L31/0735

CPC classification number: H01L31/0725 ,  H01L31/073 ,  H01L31/0735

Abstract: A multi junction solar cell includes one or more upper cells and a thin-film, polycrystalline, low-bandgap bottom cell. A single-junction solar cell includes a polycrystalline semiconductor thin film, wherein a bandgap of the solar cell is greater than 1.2 eV or less than 1.2 eV, and the solar cell is configured to receive light through two surfaces, such that the bottom cell has bifacial operation.

公开(公告)号：US11769847B2

公开(公告)日：2023-09-26

申请号：US16629322

申请日：2018-07-11

Applicant: Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO

Inventor： Johannes Adrianus Maria van Roosmalen ,  Siegfried Christiaan Veenstra ,  Dong Zhang ,  Markus Johan Jansen

IPC: H01L31/0725 ,  H01L31/05 ,  H01L31/074

CPC classification number: H01L31/0725 ,  H01L31/0508 ,  H01L31/0516 ,  H01L31/074 ,  Y02E10/56

Abstract: A solar panel includes a silicon cells submodule of silicon based cells, a front transparent plate and a backsheet. The backsheet is arranged with at least a first conductive pattern that is connected to rear surface electrical contacts on each of the silicon cells. A thin film photovoltaic submodule is arranged between the front transparent plate and the silicon cells, and includes thin film cells in an arrangement with two photovoltaic submodule contacts that connect to a second conductive pattern on the backsheet. The backsheet is arranged for four-terminal wiring with the first pattern for the silicon cells and the second pattern for the thin film cells. The thin film cells are disposed in a first group of cells and in at least a second group of cells, each connected in series. The first group is connected in parallel with the second group, between the photovoltaic submodule contacts.

公开(公告)号：US11728453B2

公开(公告)日：2023-08-15

申请号：US17373199

申请日：2021-07-12

Applicant: AZUR SPACE Solar Power GmbH

Inventor： Daniel Fuhrmann ,  Rosalinda Van Leest ,  Gregor Keller ,  Matthias Meusel

IPC: H01L31/0725 ,  H01L31/043 ,  H01L31/0735 ,  H01L31/074

CPC classification number: H01L31/0725 ,  H01L31/043 ,  H01L31/074 ,  H01L31/0735

Abstract: A stacked monolithic multijunction solar cell, which includes a first subcell having a p-n junction with an emitter layer and a base layer, the thickness of the emitter layer being less than the thickness of the base layer at least by a factor of ten, and the first subcell comprising a substrate having a semiconductor material from the groups III and V or a substrate from the group IV, and which further includes a second subcell arranged on the first subcell and a third subcell arranged on the second subcell, the two subcells each including an emitter layer and a base layer, and a tunnel diode and a back side field layer each being formed between the subcells, the thickness of the emitter layer being greater than the thickness of the base layer in each case between the second subcell and in the third subcell.

公开(公告)号：US20230253833A1

公开(公告)日：2023-08-10

申请号：US18135214

申请日：2023-04-17

Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA

Inventor： Taizo MASUDA

IPC: H02J50/30 ,  H02S10/40 ,  H02J50/40 ,  B60L8/00 ,  F21S8/08 ,  H01L31/0725

CPC classification number: H02J50/30 ,  H02S10/40 ,  H02J50/40 ,  B60L8/003 ,  F21S8/086 ,  H01L31/0725 ,  F21Y2115/30

Abstract: There are provided a method and a device for feeding electric power to a vehicle, etc. installed with a solar photovoltaic power generation panel employing a multi-junction solar cell in a non-contact manner by irradiating light to the solar photovoltaic power generation panel. In the method, light containing a wavelength component absorbed by each of all solar cell layers laminated in a multi-junction solar cell of the vehicle, etc. is projected from a light-projecting device to the light receiving surface of the multi-junction solar cell; and electric power generated by the irradiation of light from the multi-junction solar cell is taken out. The device includes structures for emitting light containing a wavelength component absorbed by each solar cell layer laminated in the multi-junction solar cell, and for irradiating the light to a light receiving surface of the multi-junction solar cell.

公开(公告)号：US20230207717A1

公开(公告)日：2023-06-29

申请号：US18156733

申请日：2023-01-19

Applicant: SolAero Technologies Corp.

Inventor： Zachary Bittner ,  John Hart ,  Daniel Derkacs

IPC: H01L31/0725 ,  H01L31/18 ,  H01L31/074

CPC classification number: H01L31/0725 ,  H01L31/1844 ,  H01L31/1852 ,  H01L31/1808 ,  H01L31/074

Abstract: A multijunction solar cell in accordance with an example implementation includes a growth substrate; a first solar subcell disposed over or in the growth substrate; a tunnel diode disposed over the first solar subcell; and a grading interlayer directly disposed over the tunnel diode; a sequence of layers of semiconductor material forming a solar cell disposed over the grading interlayer comprising a plurality of solar subcells. The multijunction solar cell also includes a first wafer bowing inhibition layer disposed directly over an uppermost sublayer of the grading interlayer, such bowing inhibition layer having an in-plane lattice constant greater than the in-plane lattice constant of the uppermost sublayer of the grading interlayer. A second wafer bowing inhibition layer is disposed directly over the first wafer bowing inhibition layer.

公开(公告)号：US20230197869A1

公开(公告)日：2023-06-22

申请号：US18052325

申请日：2022-11-03

Applicant: OXFORD UNIVERSITY INNOVATION LIMITED

Inventor： HENRY JAMES SNAITH ,  EDWARD JAMES WILLIAM CROSSLAND ,  ANDREW HEY ,  JAMES BALL ,  MICHAEL LEE ,  PABLO DOCAMPO

IPC: H01L31/036 ,  C23C14/06 ,  H10K30/15 ,  H10K85/00 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/0725 ,  H01L31/18

CPC classification number: H01L31/036 ,  C23C14/06 ,  H01L31/0725 ,  H01L31/1864 ,  H01L31/1884 ,  H01L31/022466 ,  H01L31/035272 ,  H10K30/15 ,  H10K30/151 ,  H10K85/00 ,  H10K71/40 ,  Y02E10/549

Abstract: The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p- type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer dis -posed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer. The layer of the perovskite semiconductor without open porosity (which may be said capping layer) typically forms a planar heterojunction with the n-type region or the p-type region. The invention also provides processes for producing such optoelectronic devices which typically involve solution deposition or vapour deposition of the perovskite. In one embodiment, the process is a low temperature process; for instance, the entire process may be performed at a temperature or temperatures not exceeding 150° C.