Invention Grant
US08778199B2 Epitaxial lift off in inverted metamorphic multijunction solar cells 有权
倒置变质多结太阳能电池外延提升

Epitaxial lift off in inverted metamorphic multijunction solar cells
Abstract:
The present disclosure provides a process for manufacturing a solar cell by selectively freeing an epitaxial layer from a single crystal substrate upon which it was grown. In some embodiments the process includes, among other things, providing a first substrate; depositing a separation layer on said first substrate; depositing on said separation layer a sequence of layers of semiconductor material forming a solar cell; mounting and bonding a flexible support on top of the sequence of layers; etching said separation layer while applying an agitating action to the etchant solution so as to remove said flexible support with said epitaxial layer from said first substrate.
Information query
Patent Agency Ranking
0/0