Invention Grant
- Patent Title: Epitaxial lift off in inverted metamorphic multijunction solar cells
- Patent Title (中): 倒置变质多结太阳能电池外延提升
-
Application No.: US13465477Application Date: 2012-05-07
-
Publication No.: US08778199B2Publication Date: 2014-07-15
- Inventor: Arthur Cornfeld , Daniel McGlynn , Tansen Varghese
- Applicant: Arthur Cornfeld , Daniel McGlynn , Tansen Varghese
- Applicant Address: US NM Albuquerque
- Assignee: Emoore Solar Power, Inc.
- Current Assignee: Emoore Solar Power, Inc.
- Current Assignee Address: US NM Albuquerque
- Main IPC: B29D11/00
- IPC: B29D11/00 ; H01L31/0735 ; H01L31/0725 ; H01L31/18 ; H01L31/0687

Abstract:
The present disclosure provides a process for manufacturing a solar cell by selectively freeing an epitaxial layer from a single crystal substrate upon which it was grown. In some embodiments the process includes, among other things, providing a first substrate; depositing a separation layer on said first substrate; depositing on said separation layer a sequence of layers of semiconductor material forming a solar cell; mounting and bonding a flexible support on top of the sequence of layers; etching said separation layer while applying an agitating action to the etchant solution so as to remove said flexible support with said epitaxial layer from said first substrate.
Public/Granted literature
- US20120276676A1 EPITAXIAL LIFT OFF IN INVERTED METAMORPHIC MULTIJUNCTION SOLAR CELLS Public/Granted day:2012-11-01
Information query