Invention Grant
- Patent Title: Methods of depositing antimony-comprising phase change material onto a substrate and methods of forming phase change memory circuitry
- Patent Title (中): 将含锑相变材料沉积到基板上的方法以及形成相变存储器电路的方法
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Application No.: US13936957Application Date: 2013-07-08
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Publication No.: US08785239B2Publication Date: 2014-07-22
- Inventor: Timothy A. Quick , Eugene P. Marsh
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L21/06
- IPC: H01L21/06 ; H01L21/20
Abstract:
A method of depositing an antimony-comprising phase change material onto a substrate includes providing a reducing agent and vaporized Sb(OR)3 to a substrate, where R is alkyl, and forming there-from antimony-comprising phase change material on the substrate. The phase change material has no greater than 10 atomic percent oxygen, and includes another metal in addition to antimony.
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