公开(公告)号：US10700271B2

公开(公告)日：2020-06-30

申请号：US15971398

申请日：2018-05-04

申请人： Micron Technology, Inc.

发明人： Eugene P. Marsh

IPC分类号： H01L45/00 ,  H01L21/02 ,  C23C16/34

摘要： Some embodiments include methods utilizing atomic layer deposition to form material containing silicon and nitrogen (e.g., silicon nitride). The atomic layer deposition uses SiI4 as one precursor and uses a nitrogen-containing material as another precursor. Some embodiments include methods of forming a structure in which a chalcogenide region is formed over a semiconductor substrate; and in which SiI4 is used as a precursor during formation of silicon nitride material directly against a surface of the chalcogenide region.

公开(公告)号：US09406880B2

公开(公告)日：2016-08-02

申请号：US14478408

申请日：2014-09-05

申请人： Micron Technology, Inc.

发明人： Eugene P. Marsh ,  Jun Liu

IPC分类号： H01L45/00

CPC分类号： H01L45/085 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/124 ,  H01L45/1246 ,  H01L45/1253 ,  H01L45/1266 ,  H01L45/14 ,  H01L45/143 ,  H01L45/146 ,  H01L45/147 ,  H01L45/16 ,  H01L45/1683

摘要： Resistive memory having confined filament formation is described herein. One or more method embodiments include forming an opening in a stack having a silicon material and an oxide material on the silicon material, and forming an oxide material in the opening adjacent the silicon material, wherein the oxide material formed in the opening confines filament formation in the resistive memory cell to an area enclosed by the oxide material formed in the opening.

摘要翻译： 本文描述了具有限制的灯丝形成的电阻记忆。 一个或多个方法实施例包括在硅材料上形成具有硅材料和氧化物材料的堆叠中的开口，以及在邻近硅材料的开口中形成氧化物材料，其中形成在开口中的氧化物材料限制在 电阻性存储单元到形成在开口中的氧化物材料包围的区域。

公开(公告)号：US09355837B2

公开(公告)日：2016-05-31

申请号：US14497080

申请日：2014-09-25

申请人： Micron Technology, Inc.

发明人： Eugene P. Marsh

IPC分类号： H01L21/02 ,  H01L45/00

CPC分类号： H01L45/06 ,  C23C16/345 ,  H01L21/0217 ,  H01L21/02208 ,  H01L21/02211 ,  H01L21/0228 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1608

摘要： Some embodiments include methods utilizing atomic layer deposition to form material containing silicon and nitrogen (e.g., silicon nitride). The atomic layer deposition uses SiI4 as one precursor and uses a nitrogen-containing material as another precursor. Some embodiments include methods of forming a structure in which a chalcogenide region is formed over a semiconductor substrate; and in which SiI4 is used as a precursor during formation of silicon nitride material directly against a surface of the chalcogenide region.

摘要翻译： 一些实施例包括利用原子层沉积形成含有硅和氮的材料的方法（例如，氮化硅）。 原子层沉积使用SiI4作为一种前体，并使用含氮材料作为另一种前体。 一些实施方案包括形成在半导体衬底上形成硫族化物区的结构的方法; 并且其中SiI 4在氮化硅材料形成期间直接用于硫族化物区域的表面而用作前体。

公开(公告)号：US20160093484A1

公开(公告)日：2016-03-31

申请号：US14497080

申请日：2014-09-25

申请人： Micron Technology, Inc.

发明人： Eugene P. Marsh

IPC分类号： H01L21/02 ,  H01L45/00

CPC分类号： H01L45/06 ,  C23C16/345 ,  H01L21/0217 ,  H01L21/02208 ,  H01L21/02211 ,  H01L21/0228 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1608

摘要： Some embodiments include methods utilizing atomic layer deposition to form material containing silicon and nitrogen (e.g., silicon nitride). The atomic layer deposition uses SiI4 as one precursor and uses a nitrogen-containing material as another precursor. Some embodiments include methods of forming a structure in which a chalcogenide region is formed over a semiconductor substrate; and in which SiI4 is used as a precursor during formation of silicon nitride material directly against a surface of the chalcogenide region.

摘要翻译： 一些实施例包括利用原子层沉积形成含有硅和氮的材料的方法（例如，氮化硅）。 原子层沉积使用SiI4作为一种前体，并使用含氮材料作为另一种前体。 一些实施方案包括形成在半导体衬底上形成硫族化物区的结构的方法; 并且其中SiI 4在氮化硅材料形成期间直接用于硫族化物区域的表面而用作前体。

公开(公告)号：US20150137333A1

公开(公告)日：2015-05-21

申请号：US14562921

申请日：2014-12-08

申请人： Micron Technology, Inc.

发明人： Eugene P. Marsh

IPC分类号： H01L21/02 ,  H01L21/3205

CPC分类号： H01L21/02118 ,  C23C16/0227 ,  C23C16/042 ,  C23C16/045 ,  C23C16/45534 ,  H01L21/02175 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/28562 ,  H01L21/32051 ,  H01L21/76879

摘要： Methods for depositing a material, such as a metal or a transition metal oxide, using an ALD (atomic layer deposition) process and resulting structures are disclosed. Such methods include treating a surface of a semiconductor structure periodically throughout the ALD process to regenerate a blocking material or to coat a blocking material that enables selective deposition of the material on a surface of a substrate. The surface treatment may reactivate a surface of the substrate toward the blocking material, may restore the blocking material after degradation occurs during the ALD process, and/or may coat the blocking material to prevent further degradation during the ALD process. For example, the surface treatment may be applied after performing one or more ALD cycles. Accordingly, the presently disclosed methods enable in situ restoration of blocking materials in ALD process that are generally incompatible with the blocking material and also enables selective deposition in recessed structures.

摘要翻译： 公开了使用ALD（原子层沉积）工艺和所得结构沉积诸如金属或过渡金属氧化物的材料的方法。 这样的方法包括在整个ALD过程中周期性地处理半导体结构的表面以再生阻挡材料或涂覆能够选择性地将材料沉积在衬底的表面上的阻挡材料。 表面处理可以使基材的表面朝向阻挡材料再活化，可以在ALD工艺期间退化后恢复阻挡材料，和/或可以涂覆阻挡材料以防止在ALD工艺期间的进一步降解。 例如，可以在执行一个或多个ALD循环之后施加表面处理。 因此，目前公开的方法使得能够在ALD工艺中原位恢复通常与阻挡材料不相容的阻挡材料，并且还使得能够在凹陷结构中进行选择性沉积。

公开(公告)号：US20140248771A1

公开(公告)日：2014-09-04

申请号：US14277507

申请日：2014-05-14

申请人： MICRON TECHNOLOGY, INC.

发明人： Eugene P. Marsh

IPC分类号： H01L21/768

CPC分类号： H01L21/7687 ,  C23C16/04 ,  C23C16/18 ,  H01L21/2855 ,  H01L23/5223 ,  H01L27/10852 ,  H01L28/65 ,  H01L28/91 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： A method of forming a conductive material comprises forming at least one opening extending through an organic material and an insulative material underlying the organic material to expose at least a portion of a substrate and a conductive contact in the substrate. The method further comprises lining exposed surfaces of the insulative material, the conductive contact, and the at least a portion of the substrate in the at least one opening with a conductive material without forming the conductive material on the organic material.

摘要翻译： 形成导电材料的方法包括形成延伸穿过有机材料的至少一个开口和在有机材料下面的绝缘材料，以暴露衬底中的至少一部分衬底和导电接触。 该方法还包括用导电材料将绝缘材料，导电接触件和至少一个开口中的至少一部分衬底的暴露表面衬在有机材料上而不形成导电材料。

公开(公告)号：US08765519B2

公开(公告)日：2014-07-01

申请号：US14083084

申请日：2013-11-18

申请人： Micron Technology, Inc.

发明人： Eugene P. Marsh ,  Timothy A. Quick ,  Stefan Uhlenbrock

IPC分类号： H01L21/00 ,  H01L21/06

CPC分类号： H01L45/144 ,  C23C16/28 ,  C23C16/305 ,  C23C16/45523 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1616 ,  H01L45/1683

摘要： A method of forming a phase change material which having germanium and tellurium therein includes depositing a germanium-containing material over a substrate. Such material includes elemental-form germanium. A gaseous tellurium-comprising precursor is flowed to the germanium-comprising material and tellurium is removed from the gaseous precursor to react with the elemental-form germanium in the germanium-comprising material to form a germanium and tellurium-comprising compound of a phase change material over the substrate. Other implementations are disclosed.

摘要翻译： 形成其中具有锗和碲的相变材料的方法包括在基底上沉积含锗材料。 这种材料包括元素形式的锗。 将含气态碲前驱体流入含锗材料，并从气态前驱体中除去碲以与含锗材料中的元素形式的锗反应，形成含锗和碲化合物的相变材料 在基板上。 公开了其他实现。

公开(公告)号：US08748870B2

公开(公告)日：2014-06-10

申请号：US14090770

申请日：2013-11-26

申请人： Micron Technology, Inc.

发明人： Eugene P. Marsh ,  Gurtej S. Sandhu

IPC分类号： H01L51/05 ,  H01L51/00

CPC分类号： H01L51/0558 ,  B82Y10/00 ,  G11C13/025 ,  H01L21/02527 ,  H01L21/02606 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/1606 ,  H01L29/7781 ,  H01L29/78 ,  H01L51/0003 ,  H01L51/0048 ,  H01L51/0562

摘要： A semiconductor structure including nanotubes forming an electrical connection between electrodes is disclosed. The semiconductor structure may include an open volume defined by a lower surface of an electrically insulative material and sidewalls of at least a portion of each of a dielectric material and opposing electrodes. The nanotubes may extend between the opposing electrodes, forming a physical and electrical connection therebetween. The nanotubes may be encapsulated within the open volume in the semiconductor structure. A semiconductor structure including nanotubes forming an electrical connection between source and drain regions is also disclosed. The semiconductor structure may include at least one semiconducting carbon nanotube electrically connected to a source and a drain, a dielectric material disposed over the at least one semiconducting carbon nanotube and a gate dielectric overlying a portion of the dielectric material. Methods of forming the semiconductor structures are also disclosed.

公开(公告)号：US08734957B2

公开(公告)日：2014-05-27

申请号：US13723573

申请日：2012-12-21

申请人： Micron Technology, Inc.

发明人： Eugene P. Marsh

IPC分类号： C23C16/02

CPC分类号： C23C16/0281 ,  C23C16/045 ,  C23C16/16 ,  C23C16/18 ,  C23C16/24 ,  C23C16/30 ,  C23C16/45525 ,  C23C16/45529 ,  C23C16/56 ,  C25D5/02 ,  C25D7/123 ,  H01L21/28562 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/32051 ,  H01L21/4846 ,  H01L21/76846 ,  H01L21/76873 ,  H01L23/5223 ,  H01L27/0805 ,  H01L28/90 ,  H01L2924/0002 ,  Y10T428/12542 ,  Y10T428/12611 ,  Y10T428/12861 ,  Y10T428/12868 ,  Y10T428/12875 ,  Y10T428/265 ,  H01L2924/00

摘要： A seed film and methods incorporating the seed film in semiconductor applications is provided. The seed film includes one or more noble metal layers, where each layer of the one or more noble metal layers is no greater than a monolayer. The seed film also includes either one or more conductive metal oxide layers or one or more silicon oxide layers, where either layer is no greater than a monolayer. The seed film can be used in plating, including electroplating, conductive layers, over at least a portion of the seed film. Conductive layers formed with the seed film can be used in fabricating an integrated circuit, including fabricating capacitor structures in the integrated circuit.

摘要翻译： 提供种子膜和将种子膜并入半导体应用中的方法。 种子膜包括一个或多个贵金属层，其中所述一个或多个贵金属层的每层不大于单层。 种子膜还包括一个或多个导电金属氧化物层或一个或多个氧化硅层，其中任一层不大于单层。 种子膜可用于电镀，包括电镀，导电层，至少部分种子膜。 用种子膜形成的导电层可用于制造集成电路，包括在集成电路中制造电容器结构。

公开(公告)号：US20140080279A1

公开(公告)日：2014-03-20

申请号：US14089153

申请日：2013-11-25

申请人： Micron Technology, Inc.

发明人： Gurtej S. Sandhu ,  Eugene P. Marsh

IPC分类号： H01L45/00

CPC分类号： H01L45/1641 ,  G11C11/5685 ,  G11C13/0007 ,  G11C13/0069 ,  G11C2013/0071 ,  G11C2213/72 ,  G11C2213/79 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/146 ,  H01L45/147 ,  H01L45/16 ,  H01L45/1633 ,  H01L45/1683 ,  H01L2924/0002 ,  H01L2924/00

摘要： Various embodiments include a memory device and methods of forming the same. The memory device can include an electrode coupled to one or more memory elements, to store information. The electrode may comprise a number of metals, where a first one of the metals has a Gibbs free energy for oxide formation lower than the Gibbs free energy of oxidation of a second one of the metals.

摘要翻译： 各种实施例包括存储器件及其形成方法。 存储器件可以包括耦合到一个或多个存储器元件的电极，以存储信息。 电极可以包括多种金属，其中第一种金属具有用于氧化物形成的吉布斯自由能低于第二种金属的吉布斯自由能的氧化。