发明授权
- 专利标题: Laminate structure including oxide semiconductor thin film layer, and thin film transistor
- 专利标题(中): 叠层结构包括氧化物半导体薄膜层和薄膜晶体管
-
申请号: US13881032申请日: 2011-12-27
-
公开(公告)号: US08785927B2公开(公告)日: 2014-07-22
- 发明人: Kazuaki Ebata , Shigekazu Tomai , Yuki Tsuruma , Shigeo Matsuzaki , Koki Yano
- 申请人: Kazuaki Ebata , Shigekazu Tomai , Yuki Tsuruma , Shigeo Matsuzaki , Koki Yano
- 申请人地址: JP Tokyo
- 专利权人: Idemitsu Kosan Co., Ltd.
- 当前专利权人: Idemitsu Kosan Co., Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Foley & Lardner LLP
- 优先权: JP2010-293799 20101228; JP2011-083768 20110405; JP2011-105718 20110510; JP2011-251792 20111117
- 国际申请: PCT/JP2011/007307 WO 20111227
- 国际公布: WO2012/090490 WO 20120705
- 主分类号: H01L29/12
- IPC分类号: H01L29/12
摘要:
A stacked layer structure including an oxide layer and an insulating layer, the oxide layer having a carrier concentration of 1018/cm3 or less and an average crystal diameter of 1 μm or more; and the crystals of the oxide layer being arranged in a columnar shape on the surface of the insulating layer.