发明授权
US08785932B2 IR sensing transistor and manufacturing method of display device including the same
有权
红外感测晶体管及包括其的显示装置的制造方法
- 专利标题： IR sensing transistor and manufacturing method of display device including the same
- 专利标题（中）： 红外感测晶体管及包括其的显示装置的制造方法
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申请号： US13182235申请日： 2011-07-13
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公开(公告)号： US08785932B2公开(公告)日： 2014-07-22
- 发明人: Suk Won Jung , Byeong Hoon Cho , Sung Hoon Yang , Woong Kwon Kim , Sang Youn Han , Dae Cheol Kim , Ki-Hun Jeong , Kyung-Sook Jeon , Seung Mi Seo , Jung-Suk Bang , Kun-Wook Han
- 申请人： Suk Won Jung , Byeong Hoon Cho , Sung Hoon Yang , Woong Kwon Kim , Sang Youn Han , Dae Cheol Kim , Ki-Hun Jeong , Kyung-Sook Jeon , Seung Mi Seo , Jung-Suk Bang , Kun-Wook Han
- 申请人地址： KR
- 专利权人： Samsung Display Co., Ltd.
- 当前专利权人： Samsung Display Co., Ltd.
- 当前专利权人地址： KR
- 代理机构： Innovation Counsel LLP
- 优先权： KR10-2010-0121645 20101201
- 主分类号： H01L33/50
- IPC分类号： H01L33/50
摘要：
An IR sensing transistor according to an exemplary embodiment of the present invention includes: a light blocking layer formed on a substrate; a gate insulating layer formed on the light blocking layer; a semiconductor formed on the gate insulating layer; a pair of ohmic contact members formed on the semiconductor; a source electrode and a drain electrode formed on respective ones of the ohmic contact members; a passivation layer formed on the source electrode and the drain electrode; and a gate electrode formed on the passivation layer, wherein substantially all of the gate insulating layer lies on the light blocking layer.