公开(公告)号：US08901691B2

公开(公告)日：2014-12-02

申请号：US13243737

申请日：2011-09-23

Applicant: Yun-Jong Yeo ,  Byeong-Hoon Cho ,  Ki-Hun Jeong ,  Hong-Kee Chin ,  Jung-Suk Bang ,  Woong-Kwon Kim ,  Sung-Ryul Kim ,  Hee-Joon Kim ,  Dae-Cheol Kim ,  Kun-Wook Han

Inventor： Yun-Jong Yeo ,  Byeong-Hoon Cho ,  Ki-Hun Jeong ,  Hong-Kee Chin ,  Jung-Suk Bang ,  Woong-Kwon Kim ,  Sung-Ryul Kim ,  Hee-Joon Kim ,  Dae-Cheol Kim ,  Kun-Wook Han

IPC: H01L27/32 ,  G06F3/042 ,  G06F3/041

CPC classification number: G06F3/0412 ,  G06F3/042 ,  G06F2203/04103

Abstract: A touch sensing substrate includes a substrate, a first light sensing element, a second light sensing element and a first bias line. The first light sensing element includes a first gate electrode, a first active pattern overlapping with the first gate electrode, a first source electrode partially overlapping with the first active pattern and a first drain electrode partially overlapping with the first active pattern. The second light sensing element includes a second gate electrode, a second active pattern overlapping with the second gate electrode, a second source electrode partially overlapping with the second active pattern and a second drain electrode partially overlapping with the second active pattern. The first bias line is connected to the first and second gate electrodes.

Abstract translation: 触摸感测基板包括基板，第一光感测元件，第二光感测元件和第一偏置线。 第一感光元件包括第一栅电极，与第一栅电极重叠的第一有源图案，与第一有源图案部分重叠的第一源电极和与第一有源图案部分重叠的第一漏电极。 第二感光元件包括第二栅电极，与第二栅电极重叠的第二有源图案，与第二有源图案部分重叠的第二源电极和与第二有源图案部分重叠的第二漏电极。 第一偏置线连接到第一和第二栅电极。

公开(公告)号：US08796626B2

公开(公告)日：2014-08-05

申请号：US13194365

申请日：2011-07-29

Applicant: Kun-Wook Han ,  Sung-Ryul Kim ,  Woong-Kwon Kim ,  Dae-Cheol Kim ,  Ki-Hun Jeong ,  Jung-Suk Bang ,  Yun-Jong Yeo ,  Byeong-Hoon Cho ,  Hong-Kee Chin ,  Sung-Jin Mun

Inventor： Kun-Wook Han ,  Sung-Ryul Kim ,  Woong-Kwon Kim ,  Dae-Cheol Kim ,  Ki-Hun Jeong ,  Jung-Suk Bang ,  Yun-Jong Yeo ,  Byeong-Hoon Cho ,  Hong-Kee Chin ,  Sung-Jin Mun

IPC: H01L27/14

CPC classification number: H01L27/14692 ,  H01L27/14665

Abstract: An optical sensor includes a visible light sensor includes a visible light sensing transistor and an infrared light sensor includes an infrared light sensing transistor, wherein the visible light sensing transistor receives a first driving voltage through a first driving voltage line, the infrared light sensing transistor receives a second driving voltage through a second driving voltage line, and the visible light sensing transistor and the infrared light sensing transistor receive a reference voltage through a reference voltage line.

Abstract translation: 光学传感器包括可见光传感器，其包括可见光感测晶体管，红外光传感器包括红外光检测晶体管，其中可见光感测晶体管通过第一驱动电压线接收第一驱动电压，红外光检测晶体管接收 通过第二驱动电压线的第二驱动电压，并且可见光感测晶体管和红外光检测晶体管通过参考电压线接收参考电压。

公开(公告)号：US08450742B2

公开(公告)日：2013-05-28

申请号：US13026403

申请日：2011-02-14

Applicant: Sung-Haeng Cho ,  Ki-Hun Jeong ,  Jun-Ho Song ,  Joo-Han Kim ,  Hyung-Jun Kim ,  Seung-Hwan Shim

Inventor： Sung-Haeng Cho ,  Ki-Hun Jeong ,  Jun-Ho Song ,  Joo-Han Kim ,  Hyung-Jun Kim ,  Seung-Hwan Shim

IPC: H01L29/786

CPC classification number: H01L29/66765 ,  G02F1/13454 ,  H01L27/1229 ,  H01L27/1288 ,  H01L29/04 ,  H01L29/78696

Abstract: A thin film transistor, a display device, and a manufacturing method thereof. The thin film transistor includes a control electrode, a semiconductor overlapping the control electrode, and an input electrode and an output electrode disposed on or under the semiconductor and opposite to each other. The semiconductor includes a first portion disposed between the input electrode and the output electrode and having a first crystallinity, and a second portion connected with the first portion, which overlaps the input electrode or the output electrode, and having a second crystallinity. The first crystallinity is higher than the second crystallinity.

公开(公告)号：US08294837B2

公开(公告)日：2012-10-23

申请号：US12898095

申请日：2010-10-05

Applicant: Woong-Kwon Kim ,  Dae-Cheol Kim ,  Dong-Kwon Kim ,  Ki-Hun Jeong ,  Sung-Hoon Yang ,  Sang-Youn Han ,  Suk-Won Jung ,  Byeong-Hoon Cho ,  Kyung-Sook Jeon ,  Seung-Mi Seo ,  Jung-Suk Bang ,  Mi-Seon Seo

Inventor： Woong-Kwon Kim ,  Dae-Cheol Kim ,  Dong-Kwon Kim ,  Ki-Hun Jeong ,  Sung-Hoon Yang ,  Sang-Youn Han ,  Suk-Won Jung ,  Byeong-Hoon Cho ,  Kyung-Sook Jeon ,  Seung-Mi Seo ,  Jung-Suk Bang ,  Mi-Seon Seo

IPC: G02F1/1335 ,  G02F1/1333 ,  H01L21/00

CPC classification number: G06F3/0412 ,  G02F1/13338 ,  G06F3/042

Abstract: A sensor array substrate, a display device including the sensor array substrate, and a method of manufacturing the sensor array substrate are provided. The sensor array substrate includes a substrate, a first sensor formed on a first pixel area of the substrate and configured to detect light, an overcoat layer formed on the first sensor, and a shield layer formed over the overcoat layer, wherein the shield layer overlaps the first sensor.

Abstract translation: 提供了传感器阵列基板，包括传感器阵列基板的显示装置和制造传感器阵列基板的方法。 所述传感器阵列基板包括基板，形成在所述基板的第一像素区域上并被配置为检测光的第一传感器，形成在所述第一传感器上的外涂层以及形成在所述外涂层上的屏蔽层，其中所述屏蔽层重叠 第一个传感器。

公开(公告)号：US20120248452A1

公开(公告)日：2012-10-04

申请号：US13209188

申请日：2011-08-12

Applicant: Yun Jong YEO ,  Hong-Kee CHIN ,  Byeong Hoon CHO ,  Ki-Hun JEONG ,  Jung Suk BANG ,  Woong Kwon KIM ,  Sung Ryul KIM ,  Dae Cheol KIM ,  Kun-Wook HAN

Inventor： Yun Jong YEO ,  Hong-Kee CHIN ,  Byeong Hoon CHO ,  Ki-Hun JEONG ,  Jung Suk BANG ,  Woong Kwon KIM ,  Sung Ryul KIM ,  Dae Cheol KIM ,  Kun-Wook HAN

IPC: H01L31/0376

CPC classification number: G06F3/0412 ,  G06F3/0421 ,  G06F2203/04103

Abstract: An optical sensor preventing damage to a semiconductor layer, and preventing a disconnection and a short circuit of a source electrode and a drain electrode, and a manufacturing method of the optical sensor is provided. The optical sensor includes: a substrate; an infrared ray sensing thin film transistor including a first semiconductor layer disposed on the substrate; a visible ray sensing thin film transistor including a second semiconductor layer disposed on the substrate; a switching thin film transistor including a third semiconductor layer disposed on the substrate; and a semiconductor passivation layer enclosing an upper surface and a side surface of an end portion of at least one of the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer.

Abstract translation: 提供了防止半导体层损坏并防止源电极和漏极的断开和短路的光学传感器以及光学传感器的制造方法。 光学传感器包括：基板; 包括设置在所述基板上的第一半导体层的红外线感测薄膜晶体管; 包括设置在所述基板上的第二半导体层的可见光线感测薄膜晶体管; 开关薄膜晶体管，其包括设置在所述基板上的第三半导体层; 以及半导体钝化层，其包围第一半导体层，第二半导体层和第三半导体层中的至少一个的端部的上表面和侧面。

公开(公告)号：US08278661B2

公开(公告)日：2012-10-02

申请号：US12206327

申请日：2008-09-08

Applicant: Jun-Ho Song ,  Joo-Han Kim ,  Hyung-Jun Kim ,  Sung-Haeng Cho ,  Ki-Hun Jeong ,  Seung-Hwan Shim

Inventor： Jun-Ho Song ,  Joo-Han Kim ,  Hyung-Jun Kim ,  Sung-Haeng Cho ,  Ki-Hun Jeong ,  Seung-Hwan Shim

IPC: G06F3/038

CPC classification number: H01L29/78669 ,  G09G3/3233 ,  G09G2300/0439 ,  G09G2300/0842 ,  H01L27/1229 ,  H01L27/1251 ,  H01L27/1288 ,  H01L27/3262 ,  H01L29/66765 ,  H01L29/78678 ,  H01L29/78696

Abstract: A display device and a manufacturing method thereof, include a first thin film transistor including a first control electrode, a first semiconductor disposed on the first control electrode, and a first input electrode and a first output electrode opposite to each other on the first semiconductor; and a second thin film transistor including a second control electrode, a second semiconductor disposed on the second control electrode, and a second input electrode and a second output electrode opposite to each other on the second semiconductor, wherein the first semiconductor includes a first lower semiconductor including polysilicon, and a first upper semiconductor disposed on the first lower semiconductor, the first upper semiconductor including amorphous silicon.

Abstract translation: 显示装置及其制造方法包括第一薄膜晶体管，其包括第一控制电极，设置在第一控制电极上的第一半导体，以及在第一半导体上彼此相对的第一输入电极和第一输出电极; 以及第二薄膜晶体管，其包括第二控制电极，设置在第二控制电极上的第二半导体，以及在第二半导体上彼此相对的第二输入电极和第二输出电极，其中第一半导体包括第一下半导体 包括多晶硅，以及设置在所述第一下半导体上的第一上半导体，所述第一上半导体包括非晶硅。

公开(公告)号：US20120208330A1

公开(公告)日：2012-08-16

申请号：US13450643

申请日：2012-04-19

Applicant: Ki-Hun JEONG ,  Seung-Hwan SHIM ,  Joo-Han KIM ,  Hong-Kee CHIN

Inventor： Ki-Hun JEONG ,  Seung-Hwan SHIM ,  Joo-Han KIM ,  Hong-Kee CHIN

IPC: H01L21/336

CPC classification number: H01L27/1214 ,  H01L27/1288 ,  H01L29/4908

Abstract: A method of manufacturing a thin film transistor array substrate includes: forming a gate pattern on a substrate; forming a first gate insulating film and a second gate insulating film on the substrate; forming a source/drain pattern and a semiconductor pattern on the substrate; forming a passivation film on the substrate; forming a photo-resist pattern on the passivation film; patterning the passivation film using the photo-resist pattern to form a passivation film pattern, the patterning of the passivation film including over-etching the passivation film to form an open region in the passivation film; forming a transparent electrode film on the substrate; removing the photo-resist pattern and a portion of the transparent electrode film on the photo-resist pattern; and forming a pixel electrode on the first gate insulating layer.

Abstract translation: 制造薄膜晶体管阵列基板的方法包括：在基板上形成栅极图案; 在所述基板上形成第一栅极绝缘膜和第二栅极绝缘膜; 在衬底上形成源极/漏极图案和半导体图案; 在衬底上形成钝化膜; 在钝化膜上形成光刻胶图案; 使用光刻胶图形图案化钝化膜以形成钝化膜图案，钝化膜的图案化包括过蚀刻钝化膜以在钝化膜中形成开放区域; 在基板上形成透明电极膜; 在所述光刻胶图案上除去所述光刻胶图案和所述透明电极膜的一部分; 以及在所述第一栅极绝缘层上形成像素电极。

公开(公告)号：US20120182277A1

公开(公告)日：2012-07-19

申请号：US13300358

申请日：2011-11-18

Applicant: Ki-Hun JEONG ,  Woongkwon Kim ,  Yunjong Yeo ,  Sungryul Kim ,  Byeonghoon Cho ,  Heejoon Kim ,  Daecheol Kim ,  Hong-Kee Chin ,  Jung Suk Bang ,  Kun-Wook Han

Inventor： Ki-Hun JEONG ,  Woongkwon Kim ,  Yunjong Yeo ,  Sungryul Kim ,  Byeonghoon Cho ,  Heejoon Kim ,  Daecheol Kim ,  Hong-Kee Chin ,  Jung Suk Bang ,  Kun-Wook Han

IPC: G09G5/00

CPC classification number: G06F3/0412

Abstract: A display panel includes a plurality of pixels disposed on a first panel substrate of first and second panel substrates that face each other and cooperate to display an image. The second panel substrate includes a base substrate, a read-out line, a first insulating layer, a scan line, a switching device, and a light sensor. The read-out line is disposed on the base substrate and extended in a direction. The first insulating layer is disposed on the read-out line. The scan line is extended to cross the read-out line and disposed on the first insulating layer. The switching device includes a first electrode connected to the scan line, a second electrode connected to a read-out line, and a third electrode spaced apart from the second electrode. The light sensor is structured to selectively detect lights of predetermined wavelengths and connected to the third electrode of the switching device.

Abstract translation: 显示面板包括多个像素，其设置在第一和第二面板基板的彼此面对并配合以显示图像的第一面板基板上。 第二面板基板包括基底基板，读出线，第一绝缘层，扫描线，开关器件和光传感器。 读出线设置在基底基板上并沿一个方向延伸。 第一绝缘层设置在读出线上。 扫描线被延伸以跨过读出线并且设置在第一绝缘层上。 开关装置包括连接到扫描线的第一电极，连接到读出线的第二电极和与第二电极间隔开的第三电极。 光传感器被构造成选择性地检测预定波长的光并连接到开关装置的第三电极。

公开(公告)号：US08223102B2

公开(公告)日：2012-07-17

申请号：US12537702

申请日：2009-08-07

Applicant: Chul Huh ,  Ki-Hun Jeong ,  Jae-Ho Choi ,  Yang-Ho Jung ,  Jin-Seuk Kim ,  Sang-Hun Lee ,  Gwan-Soo Kim ,  Sung-Hoon Yang

Inventor： Chul Huh ,  Ki-Hun Jeong ,  Jae-Ho Choi ,  Yang-Ho Jung ,  Jin-Seuk Kim ,  Sang-Hun Lee ,  Gwan-Soo Kim ,  Sung-Hoon Yang

IPC: G09G3/36 ,  G02F1/1339

CPC classification number: G02F1/136227 ,  G02F2001/134345 ,  G02F2001/136222

Abstract: A thin film transistor array panel including a substrate, gate lines and data lines formed on the substrate, and thin film transistors each with a control terminal, an input terminal, and an output terminal. The control and input terminals of the thin film transistor are connected to the gate and data lines. A barrier rib is formed on the gate lines, the data lines, and the thin film transistors. The output terminal of the thin film transistor has an opening, and a portion of the barrier rib formed on the output terminal has an output opening. The barrier rib output terminal portion has the same pattern as the output terminal. A barrier rib for forming contact holes is formed through exposing an organic layer formed on a passivation layer to light from the backside of a substrate using drain electrodes with openings as a light blocking film.

Abstract translation: 一种薄膜晶体管阵列面板，包括基板，形成在基板上的栅极线和数据线以及各自具有控制端子，输入端子和输出端子的薄膜晶体管。 薄膜晶体管的控制和输入端子连接到栅极和数据线。 在栅极线，数据线和薄膜晶体管上形成障壁。 薄膜晶体管的输出端子具有开口，并且形成在输出端子上的阻挡肋的一部分具有输出开口。 隔壁输出端子部分具有与输出端子相同的图案。 用于形成接触孔的隔壁通过使用具有开口的漏极作为遮光膜将形成在钝化层上的有机层暴露于来自衬底背面的光而形成。

公开(公告)号：US20120113344A1

公开(公告)日：2012-05-10

申请号：US13351820

申请日：2012-01-17

Applicant: Sungryul KIM ,  Daecheol KIM ,  Woongkwon KIM ,  Ki-Hun JEONG ,  Sungjin MUN ,  Jung Suk BANG ,  Byeonghoon CHO ,  Kun-Wook HAN

Inventor： Sungryul KIM ,  Daecheol KIM ,  Woongkwon KIM ,  Ki-Hun JEONG ,  Sungjin MUN ,  Jung Suk BANG ,  Byeonghoon CHO ,  Kun-Wook HAN

IPC: G02F1/136 ,  H01J9/24

CPC classification number: G02F1/13338 ,  G02F1/133707 ,  G02F1/136209 ,  G02F1/13624 ,  G02F2001/134345 ,  G02F2201/083 ,  G06F3/0421 ,  G06F2203/04103

Abstract: A display apparatus includes a light generating part and a display panel. The display panel includes a first substrate, and a second substrate facing the first substrate. The second substrate includes a plurality of pixel units including a sensor sensing the light generated from the light generating part and reflected from an object disposed on the display panel, and a pixel. The display panel further includes a light blocking member which is positioned at a position corresponding to an area in which the sensor is disposed and prevents the light generated from the light generating part from being directly incident to the sensor. The light blocking member is disposed on the first substrate.

Abstract translation: 显示装置包括发光部和显示面板。 显示面板包括第一基板和面向第一基板的第二基板。 第二基板包括多个像素单元，其包括传感器，其感测从发光部分产生的并且从设置在显示面板上的物体反射的光，以及像素。 显示面板还包括遮光部件，该遮光部件位于与设置有传感器的区域对应的位置，防止从光产生部生成的光直接入射到传感器。 遮光构件设置在第一基板上。