Invention Grant
- Patent Title: Semiconductor structure and method for making same
- Patent Title (中): 半导体结构及其制造方法
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Application No.: US13671573Application Date: 2012-11-08
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Publication No.: US08786085B2Publication Date: 2014-07-22
- Inventor: Hans-Joachim Barth , Mathias Vaupel , Rainer Steiner , Werner Robl , Jens Pohl , Joern Plagmann , Gottfried Beer
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Infineon Technologies AG
- Main IPC: H01L23/48
- IPC: H01L23/48
Abstract:
One or more embodiments relate to a semiconductor structure, comprising: a barrier layer overlying a workpiece surface; a seed layer overlying the barrier layer; an inhibitor layer overlying said seed layer, the inhibitor layer having a opening exposing a portion of the seed layer, and a fill layer overlying the exposed portion of the seed layer.
Public/Granted literature
- US20130062770A1 SEMICONDUCTOR STRUCTURE AND METHOD FOR MAKING SAME Public/Granted day:2013-03-14
Information query
IPC分类:
