发明授权
- 专利标题： Manufacturing method of semiconductor device, semiconductor device and electronic apparatus
- 专利标题（中）： 半导体器件，半导体器件和电子设备的制造方法
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申请号： US13359075申请日： 2012-01-26
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公开(公告)号： US08786089B2公开(公告)日： 2014-07-22
- 发明人: Kazuto Watanabe , Atsushi Matsushita , Hiroshi Horikoshi , Iwao Sugiura , Yuuji Nishimura , Syota Yamabata
- 申请人： Kazuto Watanabe , Atsushi Matsushita , Hiroshi Horikoshi , Iwao Sugiura , Yuuji Nishimura , Syota Yamabata
- 申请人地址： JP Tokyo
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Rader, Fishman & Grauer PLLC
- 优先权： JP2011-036638 20110223
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
摘要：
A manufacturing method of a semiconductor device includes exposing a wiring layer which is formed of an alloy including two or more types of metals having different standard electrode potentials, on one surface side of a semiconductor substrate and performing a plasma process of allowing plasma generated by a mixture gas of a gas including nitrogen and an inert gas or plasma generated by a gas including nitrogen to irradiate a range which includes an exposed surface of the wiring layer.
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