发明授权
- 专利标题： Semiconductor integrated circuit device
- 专利标题（中）： 半导体集成电路器件
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申请号： US13240054申请日： 2011-09-22
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公开(公告)号： US08786092B2公开(公告)日： 2014-07-22
- 发明人: Mitsuru Okazaki , Youichi Kajiwara , Naoki Takahashi , Akira Shimizu
- 申请人： Mitsuru Okazaki , Youichi Kajiwara , Naoki Takahashi , Akira Shimizu
- 申请人地址： JP Kyoto
- 专利权人： Rohm Co., Ltd.
- 当前专利权人： Rohm Co., Ltd.
- 当前专利权人地址： JP Kyoto
- 代理机构： Fish & Richardson P.C.
- 优先权： JP2005-177140 20050617
- 主分类号： H01L23/50
- IPC分类号： H01L23/50
摘要：
A semiconductor integrated circuit device includes: a rectangular shaped semiconductor substrate; a metal wiring layer formed on or over the semiconductor substrate; and a passivation layer covering the metal wiring layer. A corner non-wiring region where no portion of the metal wiring layer is formed is disposed in a corner of the semiconductor substrate. A slit is formed in a portion of the metal wiring layer which is close to the corner of the semiconductor substrate. The passivation layer includes a first passivation layer which is formed on the metal wiring layer and a second passivation layer which is formed on the first passivation layer. The first passivation layer is formed of a material that is softer than a material of the second passivation layer.
公开/授权文献
- US20120241969A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 公开/授权日：2012-09-27