Invention Grant
US08787100B2 Non-volatile memory device generating a reset pulse based on a set pulse, and method of operating the same
有权
基于设定脉冲产生复位脉冲的非易失性存储器件及其操作方法
- Patent Title: Non-volatile memory device generating a reset pulse based on a set pulse, and method of operating the same
- Patent Title (中): 基于设定脉冲产生复位脉冲的非易失性存储器件及其操作方法
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Application No.: US13710504Application Date: 2012-12-11
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Publication No.: US08787100B2Publication Date: 2014-07-22
- Inventor: Yong Jin Kwon , Kwang Jin Lee , Hye-Jin Kim
- Applicant: Yong Jin Kwon , Kwang Jin Lee , Hye-Jin Kim
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2012-0037466 20120410
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C29/02 ; G11C13/00 ; G11C7/22
Abstract:
A non-volatile memory device includes a set pulse generator configured to generate a set pulse, a reset pulse generator configured to generate a reset pulse based on the set pulse, and a write driver block configured to write second data to a second non-volatile memory cell using the reset pulse, while writing first data to a first non-volatile memory cell using the set pulse.
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