Invention Grant
- Patent Title: High reliability etched-facet photonic devices
- Patent Title (中): 高可靠性蚀刻面光子器件
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Application No.: US11356203Application Date: 2006-02-17
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Publication No.: US08787419B2Publication Date: 2014-07-22
- Inventor: Alex A. Behfar
- Applicant: Alex A. Behfar
- Applicant Address: US NY Ithaca
- Assignee: Binoptics Corporation
- Current Assignee: Binoptics Corporation
- Current Assignee Address: US NY Ithaca
- Agency: Wilmer Cutler Pickering Hale and Dorr LLP
- Main IPC: H01S5/00
- IPC: H01S5/00

Abstract:
Semiconductor photonic device surfaces are covered with a dielectric or a metal protective layer. The protective layer covers the entire device, including regions near facets at active regions, to prevent bare or unprotected semiconductor regions, thereby to form a very high reliability etched facet photonic device.
Public/Granted literature
- US20060187985A1 High reliability etched-facet photonic devices Public/Granted day:2006-08-24
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