公开(公告)号：US08306087B2

公开(公告)日：2012-11-06

申请号：US12641053

申请日：2009-12-17

Applicant: Alex A. Behfar ,  Malcolm R. Green ,  Alfred T. Schremer

Inventor： Alex A. Behfar ,  Malcolm R. Green ,  Alfred T. Schremer

IPC: H01S5/00

CPC classification number: B82Y20/00 ,  G02B6/12002 ,  G02B6/12004 ,  G02B6/122 ,  G02B6/131 ,  G02B2006/12104 ,  G02F1/01708 ,  G02F2202/102 ,  H01S5/005 ,  H01S5/0071 ,  H01S5/026 ,  H01S5/0265 ,  H01S5/028 ,  H01S5/0683 ,  H01S5/1014 ,  H01S5/1017 ,  H01S5/1021 ,  H01S5/1032 ,  H01S5/22 ,  H01S5/34306

Abstract: A laser and electroabsorption modulator (EAM) are monolithically integrated through an etched facet process. Epitaxial layers on a wafer include a first layer for a laser structure and a second layer for an EAM structure. Strong optical coupling between the laser and the EAM is realized by using two 45-degree turning mirrors to route light vertically from the laser waveguide to the EAM waveguide. A directional angled etch process is used to form the two angled facets.

Abstract translation: 激光和电吸收调制器（EAM）通过蚀刻小面工艺单片集成。 晶片上的外延层包括用于激光结构的第一层和用于EAM结构的第二层。 激光与EAM之间的强光耦合通过使用两个45度的转向镜将光从激光波导垂直传播到EAM波导来实现。 使用定向角蚀刻工艺来形成两个成角度的小平面。

公开(公告)号：US20120149141A1

公开(公告)日：2012-06-14

申请号：US13397612

申请日：2012-02-15

Applicant: Alex A. Behfar ,  Alfred T. Schremer ,  Cristian B. Stagarescu ,  Vainateya

Inventor： Alex A. Behfar ,  Alfred T. Schremer ,  Cristian B. Stagarescu ,  Vainateya

IPC: H01L33/02

CPC classification number: H01S5/0201 ,  B82Y20/00 ,  H01S5/0042 ,  H01S5/0203 ,  H01S5/0262 ,  H01S5/0264 ,  H01S5/028 ,  H01S5/1039 ,  H01S5/18 ,  H01S5/22 ,  H01S5/32341 ,  H01S5/34333

Abstract: A process for fabricating AlGaInN-based photonic devices, such as lasers, capable of emitting blue light employs dry etching to form device waveguides and mirrors. The dry etching is preferably performed using a Chemically Assisted Ion Beam Etching (CAIBE) system.

Abstract translation: 用于制造能够发射蓝光的基于AlGaInN的光子器件（例如激光器）的工艺采用干蚀刻来形成器件波导和反射镜。 干蚀刻优选使用化学辅助离子束蚀刻（CAIBE）系统进行。

公开(公告)号：US07957445B2

公开(公告)日：2011-06-07

申请号：US11444414

申请日：2006-06-01

Applicant: Alex A. Behfar ,  Alfred T. Schremer

Inventor： Alex A. Behfar ,  Alfred T. Schremer

IPC: H01S5/00

CPC classification number: H01S5/028 ,  H01S5/0203 ,  H01S5/0286 ,  H01S5/0287 ,  H01S5/1082 ,  H01S5/1085 ,  H01S5/18 ,  H01S5/22 ,  H01S2301/166

Abstract: An etched-facet single lateral mode semiconductor photonic device is fabricated by depositing an anti reflective coating on the etched facet, and depositing a reflectivity modifying coating in a spatially controlled manner to modify the spatial performance of the emitted beam.

Abstract translation: 蚀刻小面单横向半导体光子器件通过在蚀刻刻面上沉积抗反射涂层并以空间受控的方式沉积反射率修饰涂层来制造，以改变发射光束的空间性能。

公开(公告)号：US20110019708A1

公开(公告)日：2011-01-27

申请号：US12895979

申请日：2010-10-01

Applicant: Alex A. Behfar ,  Alfred T. Schremer, JR. ,  Cristian B. Stagarescu

Inventor： Alex A. Behfar ,  Alfred T. Schremer, JR. ,  Cristian B. Stagarescu

IPC: H01S5/10 ,  H01S3/083 ,  G02F1/17

CPC classification number: H01S5/0287 ,  G02B6/12004 ,  H01S5/005 ,  H01S5/0085 ,  H01S5/0656 ,  H01S5/06817 ,  H01S5/0687 ,  H01S5/1021 ,  H01S5/1071 ,  H01S5/1082 ,  H01S5/1085 ,  H01S5/125 ,  H01S5/14

Abstract: Unidirectionality of lasers is enhanced by forming one or more etched gaps (78, 80) in the laser cavity. The gaps may be provided in any segment of a laser, such as any leg of a ring laser, or in one leg (62) of a V-shaped laser (60). A Brewster angle facet at the distal end of a photonic device coupled to the laser reduces back-reflection into the laser cavity. A distributed Bragg reflector is used at the output of a laser to enhance the side-mode suppression ratio of the laser.

Abstract translation: 通过在激光腔中形成一个或多个蚀刻间隙（78,80）来增强激光器的单向性。 可以在激光器的任何部分（例如环形激光器的任何腿部）中或在V形激光器（60）的一个腿部（62）中提供间隙。 耦合到激光器的光子器件的远端处的布鲁斯特角小面减少反射到激光腔。 在激光器的输出处使用分布式布拉格反射器来增强激光器的侧模抑制比。

公开(公告)号：US07817702B2

公开(公告)日：2010-10-19

申请号：US10802734

申请日：2004-03-18

Applicant: Alex A. Behfar ,  Alfred T. Schremer, Jr. ,  Cristian B. Stagarescu

Inventor： Alex A. Behfar ,  Alfred T. Schremer, Jr. ,  Cristian B. Stagarescu

IPC: H01S3/081 ,  H01S3/083 ,  H01S3/08

CPC classification number: H01S5/0287 ,  G02B6/12004 ,  H01S5/005 ,  H01S5/0085 ,  H01S5/0656 ,  H01S5/06817 ,  H01S5/0687 ,  H01S5/1021 ,  H01S5/1071 ,  H01S5/1082 ,  H01S5/1085 ,  H01S5/125 ,  H01S5/14

Abstract: Unidirectionality of lasers is enhanced by forming one or more etched gaps (78, 80) in the laser cavity. The gaps may be provided in any segment of a laser, such as any leg of a ring laser, or in one leg (62) of a V-shaped laser (60). A Brewster angle facet at the distal end of a photonic device coupled to the laser reduces back-reflection into the laser cavity. A distributed Bragg reflector is used at the output of a laser to enhance the side-mode suppression ratio of the laser.

Abstract translation: 通过在激光腔中形成一个或多个蚀刻间隙（78,80）来增强激光器的单向性。 可以在激光器的任何部分（例如环形激光器的任何腿部）中或在V形激光器（60）的一个腿部（62）中提供间隙。 耦合到激光器的光子器件的远端处的布鲁斯特角小面减少反射到激光腔。 在激光器的输出处使用分布式布拉格反射器来增强激光器的侧模抑制比。

公开(公告)号：US20100091810A1

公开(公告)日：2010-04-15

申请号：US12641053

申请日：2009-12-17

Applicant: Alex A. Behfar ,  Malcolm R. Green ,  Alfred T. Schremer

Inventor： Alex A. Behfar ,  Malcolm R. Green ,  Alfred T. Schremer

IPC: H01S5/026 ,  H01L33/00

CPC classification number: B82Y20/00 ,  G02B6/12002 ,  G02B6/12004 ,  G02B6/122 ,  G02B6/131 ,  G02B2006/12104 ,  G02F1/01708 ,  G02F2202/102 ,  H01S5/005 ,  H01S5/0071 ,  H01S5/026 ,  H01S5/0265 ,  H01S5/028 ,  H01S5/0683 ,  H01S5/1014 ,  H01S5/1017 ,  H01S5/1021 ,  H01S5/1032 ,  H01S5/22 ,  H01S5/34306

Abstract: A laser and electroabsorption modulator (EAM) are monolithically integrated through an etched facet process. Epitaxial layers on a wafer include a first layer for a laser structure and a second layer for an EAM structure. Strong optical coupling between the laser and the EAM is realized by using two 45-degree turning mirrors to route light vertically from the laser waveguide to the EAM waveguide. A directional angled etch process is used to form the two angled facets.

公开(公告)号：US07606277B2

公开(公告)日：2009-10-20

申请号：US11644828

申请日：2006-12-26

Applicant: Alex A. Behfar ,  Cristian B. Stagarescu ,  Alfred T. Schremer

Inventor： Alex A. Behfar ,  Cristian B. Stagarescu ,  Alfred T. Schremer

IPC: H01S5/00

CPC classification number: H01S5/22 ,  H01S5/209 ,  H01S5/2214

Abstract: A photonic device incorporate an epitaxial structure having an active region, and which includes a wet etch stop layer above, but close to, the active region. An etched-facet ridge laser is fabricated on the epitaxial structure by dry etching followed by wet etching. The dry etch is designed to stop before reading the depth needed to form the ridge. The wet etch completes the formation of the ridge and stops at the wet etch stop layer.

Abstract translation: 光子器件包含具有有源区的外延结构，并且其包括在有源区上方但接近于有源区的湿蚀刻停止层。 通过干法蚀刻然后进行湿蚀刻，在外延结构上制造蚀刻小面脊激光器。 干蚀刻被设计为在读取形成脊的所需深度之前停止。 湿蚀刻完成了脊的形成，并在湿蚀刻停止层处停止。

公开(公告)号：US07598527B2

公开(公告)日：2009-10-06

申请号：US11325325

申请日：2006-01-05

Applicant: Alex A. Behfar ,  Cristian B. Stagarescu ,  Malcolm R. Green ,  Alfred T. Schremer, Jr.

Inventor： Alex A. Behfar ,  Cristian B. Stagarescu ,  Malcolm R. Green ,  Alfred T. Schremer, Jr.

IPC: H01L29/161

CPC classification number: H01S5/0262 ,  G02B6/4214 ,  G02B6/4246 ,  H01L31/03046 ,  H01L31/105 ,  H01L31/107 ,  H01L31/153 ,  H01L31/1844 ,  H01S5/005 ,  H01S5/0078 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/026 ,  H01S5/0264 ,  H01S5/0267 ,  H01S5/1085 ,  H01S5/18 ,  H01S5/2022 ,  H01S5/4012 ,  H01S5/4056 ,  Y02E10/544

Abstract: A laser and detector integrated on corresponding epitaxial layers of a single chip cooperate with on-chip and/or external optics to couple light of a first wavelength emitted by the laser to a single external device such as an optical fiber and to simultaneously couple light of a different wavelength received from the external device to the detector to provide bidirectional photonic operation. Multiple lasers and detectors may be integrated on the chip to provide multiple bidirectional channels. A monitoring photodetector is fabricated in the detector epitaxy adjacent one end of the laser.

Abstract translation: 集成在单个芯片的相应外延层上的激光和检测器与片上和/或外部光学器件配合，将由激光器发射的第一波长的光耦合到单个外部设备（例如光纤），并同时耦合光 从外部设备接收到不同波长的检测器以提供双向光子操作。 多个激光器和检测器可以集成在芯片上以提供多个双向通道。 在邻近激光器一端的检测器外延中制造监测光电检测器。

公开(公告)号：US08160114B2

公开(公告)日：2012-04-17

申请号：US12908592

申请日：2010-10-20

Applicant: Alex A. Behfar ,  Kiyofumi Muro ,  Cristian B. Stagarescu ,  Alfred T. Schremer

Inventor： Alex A. Behfar ,  Kiyofumi Muro ,  Cristian B. Stagarescu ,  Alfred T. Schremer

IPC: H01S3/03

CPC classification number: H01S5/0625 ,  B82Y20/00 ,  H01S5/0264 ,  H01S5/06256 ,  H01S5/0655 ,  H01S5/1017 ,  H01S5/1021 ,  H01S5/1039 ,  H01S5/125 ,  H01S5/141 ,  H01S5/22 ,  H01S5/343 ,  H01S5/34313

Abstract: A single-mode, etched facet distributed Bragg reflector laser includes an AlGaInAs/InP laser cavity, a front mirror stack with multiple Fabry-Perot elements, a rear DBR reflector, and a rear detector. The front mirror stack elements and the rear reflector elements include input and output etched facets, and the laser cavity is an etched ridge cavity, all formed from an epitaxial wafer by a two-step lithography and CAIBE process.

Abstract translation: 单模蚀刻刻面分布布拉格反射激光器包括AlGaInAs / InP激光腔，具有多个法布里 - 珀罗元件的前镜叠层，后DBR反射器和后检测器。 前反射镜堆叠元件和后反射器元件包括输入和输出蚀刻刻面，并且激光腔是蚀刻的脊腔，全部由外延晶片通过两步光刻和CAIBE工艺形成。

公开(公告)号：US07835415B2

公开(公告)日：2010-11-16

申请号：US10929718

申请日：2004-08-31

Applicant: Alex A. Behfar ,  Kiyofumi Muro ,  Cristian B. Stagarescu ,  Alfred T. Schremer

Inventor： Alex A. Behfar ,  Kiyofumi Muro ,  Cristian B. Stagarescu ,  Alfred T. Schremer

IPC: H01S3/03

CPC classification number: H01S5/0625 ,  B82Y20/00 ,  H01S5/0264 ,  H01S5/06256 ,  H01S5/0655 ,  H01S5/1017 ,  H01S5/1021 ,  H01S5/1039 ,  H01S5/125 ,  H01S5/141 ,  H01S5/22 ,  H01S5/343 ,  H01S5/34313

Abstract: A single-mode, etched facet distributed Bragg reflector laser includes an AlGaInAs/InP laser cavity, a front mirror stack with multiple Fabry-Perot elements, a rear DBR reflector, and a rear detector. The front mirror stack elements and the rear reflector elements include input and output etched facets, and the laser cavity is an etched ridge cavity, all formed from an epitaxial wafer by a two-step lithography and CAIBE process.

Abstract translation: 单模蚀刻刻面分布布拉格反射激光器包括AlGaInAs / InP激光腔，具有多个法布里 - 珀罗元件的前镜叠层，后DBR反射器和后检测器。 前反射镜堆叠元件和后反射器元件包括输入和输出蚀刻刻面，并且激光腔是蚀刻的脊腔，全部由外延晶片通过两步光刻和CAIBE工艺形成。