Invention Grant
- Patent Title: Methods of forming electrical components and memory cells
- Patent Title (中): 形成电气部件和记忆电池的方法
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Application No.: US13718163Application Date: 2012-12-18
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Publication No.: US08790987B2Publication Date: 2014-07-29
- Inventor: Scott E. Sills , Roy E. Meade
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L21/02
- IPC: H01L21/02

Abstract:
Some embodiments include methods of forming electrical components. First and second exposed surface configurations are formed over a first structure, and material is then formed across the surface configurations. The material is sub-divided amongst two or more domains, with a first of the domains being induced by the first surface configuration, and with a second of the domains being induced by the second surface configuration. A second structure is then formed over the material. The first domains of the material are incorporated into electrical components. The second domains may be replaced with dielectric material to provide isolation between adjacent electrical components, or may be utilized as intervening regions between adjacent electrical components.
Public/Granted literature
- US20130130466A1 Methods of Forming Electrical Components and Memory Cells Public/Granted day:2013-05-23
Information query
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