Through-silicon via structure formation process

Invention Grant

US08791011B2 Through-silicon via structure formation process 有权

Title translation: 通硅结构形成工艺

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Patent Title: Through-silicon via structure formation process
Patent Title (中): 通硅结构形成工艺
Application No.: US13775983

Application Date: 2013-02-25
Publication No.: US08791011B2

Publication Date: 2014-07-29
Inventor: Yung-Chi Lin , Weng-Jin Wu , Shau-Lin Shue
Applicant: Yung-Chi Lin , Weng-Jin Wu , Shau-Lin Shue
Applicant Address: TW
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee Address: TW
Agency: Lowe Hauptman & Ham, LLP
Main IPC: H01L21/4763
IPC: H01L21/4763

Through-silicon via structure formation process

Abstract:

In a process, an opening is formed to extend from a front surface of a semiconductor substrate through a part of the semiconductor substrate. A metal seed layer is formed on a sidewall of the opening. A block layer is formed on only a portion of the metal seed layer. A metal layer is formed on the block layer and the metal seed layer to fill the opening.

Abstract(Chinese):

在此过程中，形成从半导体衬底的前表面延伸穿过半导体衬底的一部分的开口。金属种子层形成在开口的侧壁上。仅在金属种子层的一部分上形成阻挡层。在阻挡层和金属种子层上形成金属层以填充开口。

Public/Granted literature

US20130171772A1 THROUGH-SILICON VIA STRUCTURE FORMATION PROCESS Public/Granted day:2013-07-04

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）