发明授权
- 专利标题: Wafer backside interconnect structure connected to TSVs
- 专利标题(中): 晶圆背面互连结构连接到TSV
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申请号: US12832019申请日: 2010-07-07
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公开(公告)号: US08791549B2公开(公告)日: 2014-07-29
- 发明人: Ming-Fa Chen , Wen-Chih Chiou , Shau-Lin Shue
- 申请人: Ming-Fa Chen , Wen-Chih Chiou , Shau-Lin Shue
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Slater and Matsil, L.L.P.
- 主分类号: H01L29/40
- IPC分类号: H01L29/40 ; H01L23/48 ; H01L23/52
摘要:
An integrated circuit structure includes a semiconductor substrate having a front surface and a back surface; a conductive via passing through the semiconductor substrate; and a metal feature on the back surface of the semiconductor substrate. The metal feature includes a metal pad overlying and contacting the conductive via, and a metal line over the conductive via. The metal line includes a dual damascene structure. The integrated circuit structure further includes a bump overlying the metal line.
公开/授权文献
- US20110068466A1 Wafer Backside Interconnect Structure Connected to TSVs 公开/授权日:2011-03-24
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