Invention Grant
US08795029B2 Apparatus and method for in-situ endpoint detection for semiconductor processing operations
有权
用于半导体处理操作的原位端点检测的装置和方法
- Patent Title: Apparatus and method for in-situ endpoint detection for semiconductor processing operations
- Patent Title (中): 用于半导体处理操作的原位端点检测的装置和方法
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Application No.: US13745691Application Date: 2013-01-18
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Publication No.: US08795029B2Publication Date: 2014-08-05
- Inventor: Manoocher Birang , Nils Johansson , Allan Gleason
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Fish & Richardson P.C.
- Main IPC: B24B49/12
- IPC: B24B49/12

Abstract:
An endpoint detection method includes processing an outer surface of a substrate, directing an incident light beam through a window in an opaque metal body onto the surface being processed, receiving at a detector a reflected light beam from the substrate and generating a signal from the detector, and generating a signal based on the reflected light beam received at the detector, and detecting a processing endpoint. The signal is a time-varying cyclic signal that varies as the thickness of the layer varies over time, and detecting the processing endpoint includes detecting that a portion of a cycle of the cyclic signal has passed, the portion being less than a full cycle of the cyclic signal.
Public/Granted literature
- US20130130413A1 APPARATUS AND METHOD FOR IN-SITU ENDPOINT DETECTION FOR SEMICONDUCTOR PROCESSING OPERATIONS Public/Granted day:2013-05-23
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