发明授权
- 专利标题： Through substrate vias
- 专利标题（中）： 通过衬底通孔
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申请号： US13468609申请日： 2012-05-10
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公开(公告)号： US08796138B2公开(公告)日： 2014-08-05
- 发明人: John Michael Cotte , Christopher Vincent Jahnes , Bucknell Chapman Webb
- 申请人： John Michael Cotte , Christopher Vincent Jahnes , Bucknell Chapman Webb
- 申请人地址： US NY Armonk
- 专利权人： International Business Machiness Corporation
- 当前专利权人： International Business Machiness Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Ryan, Mason & Lewis, LLP
- 代理商 Daniel P. Morris
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L23/48
摘要：
Methods and apparatus for forming through-vias are presented, for example, a method for forming a via in a portion of a semiconductor wafer comprising a substrate. The method comprises forming a trench surrounding a first part of the substrate such that the first part is separated from a second part of the substrate, forming a hole through the substrate within the first part, and forming a first metal within the hole. The trench extends through the substrate. The first metal extends from a front surface of the substrate to a back surface of the substrate. The via comprises the hole and the first metal.
公开/授权文献
- US20120217651A1 THROUGH SUBSTRATE VIAS 公开/授权日：2012-08-30
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