Collector-up bipolar junction transistors in BiCMOS technology

Invention Grant

US08796149B1 Collector-up bipolar junction transistors in BiCMOS technology 有权

Title translation: 采用BiCMOS技术的双极结型晶体管

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Patent Title: Collector-up bipolar junction transistors in BiCMOS technology
Patent Title (中): 采用BiCMOS技术的双极结型晶体管
Application No.: US13769500

Application Date: 2013-02-18
Publication No.: US08796149B1

Publication Date: 2014-08-05
Inventor: James W. Adkisson , David L. Harame , Qizhi Liu
Applicant: International Business Machines Corporation
Applicant Address: US NY Armonk
Assignee: International Business Machines Corporation
Current Assignee: International Business Machines Corporation
Current Assignee Address: US NY Armonk
Agency: Wood, Herron & Evans LLP
Agent Michael J. Le Strange
Main IPC: H01L21/311
IPC: H01L21/311

Collector-up bipolar junction transistors in BiCMOS technology

Abstract:

Fabrication methods, device structures, and design structures for a bipolar junction transistor. An emitter is formed in a device region defined in a substrate. An intrinsic base is formed on the emitter. A collector is formed that is separated from the emitter by the intrinsic base. The collector includes a semiconductor material having an electronic bandgap greater than an electronic bandgap of a semiconductor material of the device region.

Abstract(Chinese):

双极结晶体管的制造方法，器件结构和设计结构。在衬底中限定的器件区域中形成发射极。在发射极上形成一个本征基极。形成了通过内在基极与发射极分离的集电极。集电体包括具有大于器件区域的半导体材料的电子带隙的电子带隙的半导体材料。

Public/Granted literature

US20140231877A1 COLLECTOR-UP BIPOLAR JUNCTION TRANSISTORS IN BICMOS TECHNOLOGY Public/Granted day:2014-08-21

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3105	......后处理
H01L21/311	.......绝缘层的刻蚀