发明授权
- 专利标题: Transistor and method of manufacturing the same
- 专利标题(中): 晶体管及其制造方法
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申请号: US13420248申请日: 2012-03-14
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公开(公告)号: US08796760B2公开(公告)日: 2014-08-05
- 发明人: Chih-Chang Cheng , Fu-Yu Chu , Ruey-Hsin Liu
- 申请人: Chih-Chang Cheng , Fu-Yu Chu , Ruey-Hsin Liu
- 申请人地址: TW
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW
- 代理机构: Lowe Hauptman & Ham, LLP
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L21/336
摘要:
A manufacture includes a doped layer, a body structure over the doped layer, a trench defined in the doped layer, an insulator partially filling the trench, and a first conductive feature buried in, and separated from the doped layer and the body structure by, the insulator. The doped layer has a first type doping. The body structure has an upper surface and includes a body region. The body region has a second type doping different from the first type doping. The trench has a bottom surface. The first conductive feature extends from a position substantially leveled with the upper surface of the body structure toward the bottom surface of the trench. The first conductive feature overlaps the doped layer for an overlapping distance, and the overlapping distance ranging from 0 to 2 μm.
公开/授权文献
- US20130240984A1 TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 公开/授权日:2013-09-19