发明授权
- 专利标题： Forming sensing elements above a semiconductor substrate
- 专利标题（中）： 在半导体衬底上形成传感元件
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申请号： US12107627申请日： 2008-04-22
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公开(公告)号： US08796804B2公开(公告)日： 2014-08-05
- 发明人: Ke Chun Liu , Kuan-Chieh Huang , Chin-Min Lin , Ken Wen-Chien Fu , Mingo Lin
- 申请人： Ke Chun Liu , Kuan-Chieh Huang , Chin-Min Lin , Ken Wen-Chien Fu , Mingo Lin
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater and Matsil, L.L.P.
- 主分类号： H01L31/00
- IPC分类号： H01L31/00
摘要：
An integrated circuit structure includes a substrate and a metallization layer over the substrate. The metallization layer includes a dielectric layer and metal lines in the dielectric layer. The integrated circuit structure further includes a sensing element over the metallization layer. The sensing element may be formed in passivation layers.
公开/授权文献
- US20090263674A1 Forming Sensing Elements above a Semiconductor Substrate 公开/授权日：2009-10-22
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