Invention Grant
- Patent Title: Refreshing data of memory cells with electrically floating body transistors
- Patent Title (中): 使用电浮体晶体管刷新存储单元的数据
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Application No.: US13899192Application Date: 2013-05-21
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Publication No.: US08797819B2Publication Date: 2014-08-05
- Inventor: Eric Carman , Mikhail Nagoga , Serguei Okhonin
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wilmer Cutler Pickering Hale and Dorr LLP
- Main IPC: G11C7/00
- IPC: G11C7/00
Abstract:
A semiconductor device along with circuits including the same and methods of operating the same are described. The device comprises a memory cell including one transistor. The transistor comprises a gate, an electrically floating body region, and a source region and a drain region adjacent the body region. Data stored in memory cells of the device can be refreshed within a single clock cycle.
Public/Granted literature
- US20130250674A1 REFRESHING DATA OF MEMORY CELLS WITH ELECTRICALLY FLOATING BODY TRANSISTORS Public/Granted day:2013-09-26
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