Invention Grant
- Patent Title: Oxide sintered body and production method therefor, target, and transparent conductive film and transparent conductive substrate obtained by using the same
- Patent Title (中): 氧化物烧结体及其制造方法,靶和透明导电膜及透明导电性基板的制造方法
-
Application No.: US13834305Application Date: 2013-03-15
-
Publication No.: US08801973B2Publication Date: 2014-08-12
- Inventor: Tokuyuki Nakayama , Yoshiyuki Abe
- Applicant: Sumitomo Metal Mining Co., Ltd.
- Applicant Address: JP Tokyo
- Assignee: Sumitomo Metal Mining Co., Ltd.
- Current Assignee: Sumitomo Metal Mining Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Edwards Wildman Palmer LLP
- Priority: JP2007-178879 20070706
- Main IPC: H01B1/08
- IPC: H01B1/08 ; C23C14/08 ; C04B35/01 ; C03C17/245 ; C23C14/34

Abstract:
A target for sputtering or a tablet for ion plating, an oxide sintered body suitable for obtaining the same and a production method therefor, and a transparent conductive film having low absorption of blue light and low specific resistance, obtained by using the same are provided by an oxide sintered body having indium and gallium as an oxide, characterized in that an In2O3 phase with a bixbyite-type structure forms a major crystal phase, and a GaInO3 phase of a β-Ga2O3-type structure, or GaInO3 phase and a (Ga, In)2O3 phase is finely dispersed therein, as a crystal grain having an average particle diameter of equal to or smaller than 5 μm, and a content of gallium is equal to or higher than 10% by atom and below 25% by atom as atom number ratio of Ga/(In+Ga) or the like.
Public/Granted literature
Information query