公开(公告)号：US09721770B2

公开(公告)日：2017-08-01

申请号：US14641981

申请日：2015-03-09

Applicant: SUMITOMO METAL MINING CO., LTD.

Inventor： Tokuyuki Nakayama ,  Yoshiyuki Abe

IPC: C23C14/08 ,  H01B1/08 ,  H01J37/34 ,  C23C14/34 ,  H01L33/42 ,  H01L31/0224 ,  H01J1/00

CPC classification number: H01J37/3429 ,  C04B35/01 ,  C04B35/645 ,  C04B2235/3229 ,  C04B2235/3232 ,  C04B2235/3244 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/5472 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/6581 ,  C04B2235/6585 ,  C04B2235/6586 ,  C04B2235/668 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2235/95 ,  C04B2235/963 ,  C23C14/08 ,  C23C14/3414 ,  H01B1/08 ,  H01J1/00 ,  H01L31/022466 ,  H01L33/42

Abstract: A target for sputtering which enables to attain high rate film-formation of a transparent conductive film suitable for a blue LED or a solar cell. A oxide sintered body includes an indium oxide and a cerium oxide, and one or more oxide of titanium, zirconium, hafnium, molybdenum and tungsten. The cerium content is 0.3 to 9% by atom, as an atomicity ratio of Ce/(In+Ce), and the content of cerium is equal to or lower than 9% by atom, as an atomicity ratio of Ce/(In+Ce). The oxide sintered body has an In2O3 phase of a bixbyite structure has a CeO2 phase of a fluorite-type structure finely dispersed as crystal grains having an average particle diameter of equal to or smaller than 3 μm.

公开(公告)号：US20150235820A1

公开(公告)日：2015-08-20

申请号：US14641981

申请日：2015-03-09

Applicant: SUMITOMO METAL MINING CO., LTD.

Inventor： Tokuyuki Nakayama ,  Yoshiyuki Abe

IPC: H01J37/34 ,  H01J1/00 ,  H01L31/0224 ,  C23C14/34 ,  H01L33/42

CPC classification number: H01J37/3429 ,  C04B35/01 ,  C04B35/645 ,  C04B2235/3229 ,  C04B2235/3232 ,  C04B2235/3244 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/5472 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/6581 ,  C04B2235/6585 ,  C04B2235/6586 ,  C04B2235/668 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2235/95 ,  C04B2235/963 ,  C23C14/08 ,  C23C14/3414 ,  H01B1/08 ,  H01J1/00 ,  H01L31/022466 ,  H01L33/42

Abstract: A target for sputtering which enables to attain high rate film-formation of a transparent conductive film suitable for a blue LED or a solar cell. A oxide sintered body includes an indium oxide and a cerium oxide, and one or more oxide of titanium, zirconium, hafnium, molybdenum and tungsten. The cerium content is 0.3 to 9% by atom, as an atomicity ratio of Ce/(In+Ce), and the content of cerium is equal to or lower than 9% by atom, as an atomicity ratio of Ce/(In+Ce). The oxide sintered body has an In2O3 phase of a bixbyite structure has a CeO2 phase of a fluorite-type structure finely dispersed as crystal grains having an average particle diameter of equal to or smaller than 3 μm.

Abstract translation: 能够实现适合于蓝色LED或太阳能电池的透明导电膜的高速成膜的溅射靶。 氧化物烧结体包括氧化铟和氧化铈，以及一种或多种钛，锆，铪，钼和钨的氧化物。 作为Ce /（In + Ce）的原子数比，铈含量为0.3〜9原子％，铈的含量为9原子％以下，Ce /（In + Ce）。 氧化物烧结体具有二氧化硅结构的In 2 O 3相，其具有以平均粒径为3μm以下的晶粒细分散的萤石型结构的CeO 2相。

公开(公告)号：US08801973B2

公开(公告)日：2014-08-12

申请号：US13834305

申请日：2013-03-15

Applicant: Sumitomo Metal Mining Co., Ltd.

Inventor： Tokuyuki Nakayama ,  Yoshiyuki Abe

IPC: H01B1/08 ,  C23C14/08 ,  C04B35/01 ,  C03C17/245 ,  C23C14/34

CPC classification number: C23C14/3414 ,  C03C17/245 ,  C04B35/01 ,  C04B2235/3229 ,  C04B2235/3232 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3286 ,  C04B2235/3287 ,  C04B2235/3293 ,  C04B2235/3418 ,  C04B2235/5445 ,  C04B2235/76 ,  C04B2235/762 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2235/80 ,  C23C14/086 ,  C23C14/3407 ,  H01B1/08 ,  Y10T428/24355 ,  Y10T428/268 ,  Y10T428/30 ,  Y10T428/31507 ,  Y10T428/31786 ,  Y10T428/31935

Abstract: A target for sputtering or a tablet for ion plating, an oxide sintered body suitable for obtaining the same and a production method therefor, and a transparent conductive film having low absorption of blue light and low specific resistance, obtained by using the same are provided by an oxide sintered body having indium and gallium as an oxide, characterized in that an In2O3 phase with a bixbyite-type structure forms a major crystal phase, and a GaInO3 phase of a β-Ga2O3-type structure, or GaInO3 phase and a (Ga, In)2O3 phase is finely dispersed therein, as a crystal grain having an average particle diameter of equal to or smaller than 5 μm, and a content of gallium is equal to or higher than 10% by atom and below 25% by atom as atom number ratio of Ga/(In+Ga) or the like.

Abstract translation: 用于溅射的靶材或用于离子镀的片剂，适于获得其的氧化物烧结体及其制备方法以及通过使用它们获得的具有低的蓝光吸收和低电阻率的透明导电膜由 具有铟和镓作为氧化物的氧化物烧结体，其特征在于具有双晶型结构的In 2 O 3相形成主晶相，并且形成Ga 2 O 3型结构的GaInO 3相，或GaInO 3相和（ Ga，In）2 O 3相中，作为平均粒径为5μm以下的晶粒，其含量等于或高于10原子％，低于25原子％ 作为Ga /（In + Ga）的原子数比等。

公开(公告)号：US20130202850A1

公开(公告)日：2013-08-08

申请号：US13834305

申请日：2013-03-15

Applicant: SUMITOMO METAL MINING CO., LTD.

Inventor： Tokuyuki Nakayama ,  Yoshiyuki Abe

IPC: C23C14/34 ,  C03C17/245 ,  H01B1/08

CPC classification number: C23C14/3414 ,  C03C17/245 ,  C04B35/01 ,  C04B2235/3229 ,  C04B2235/3232 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3286 ,  C04B2235/3287 ,  C04B2235/3293 ,  C04B2235/3418 ,  C04B2235/5445 ,  C04B2235/76 ,  C04B2235/762 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2235/80 ,  C23C14/086 ,  C23C14/3407 ,  H01B1/08 ,  Y10T428/24355 ,  Y10T428/268 ,  Y10T428/30 ,  Y10T428/31507 ,  Y10T428/31786 ,  Y10T428/31935

Abstract: A target for sputtering or a tablet for ion plating, which enables to attain high rate film-formation and a nodule-less, an oxide sintered body suitable for obtaining the same and a production method therefor, and a transparent conductive film having low absorption of blue light and low specific resistance, obtained by using the same.It is provided by an oxide sintered body having indium and gallium as an oxide, characterized in that an In2O3 phase with a bixbyite-type structure forms a major crystal phase, and a GaInO3 phase of a β-Ga2O3-type structure, or GaInO3 phase and a (Ga,In)2O3 phase is finely dispersed therein, as a crystal grain having an average particle diameter of equal to or smaller than 5 μm, and a content of gallium is equal to or higher than 10% by atom and below 35% by atom as atom number ratio of Ga/(In+Ga) or the like.

Abstract translation: 用于溅射的靶或用于离子镀的片，其能够获得高速成膜和无结节，适于获得其的氧化物烧结体及其制造方法，以及具有低吸收率的透明导电膜 蓝光和低比电阻，通过使用它们获得。 由铟和镓作为氧化物的氧化物烧结体提供，其特征在于具有双晶型结构的In 2 O 3相形成主晶相，并且具有β-Ga 2 O 3型结构的GaInO 3相或GaInO 3相 和（Ga，In）2 O 3相，作为平均粒径为5μm以下的结晶粒，并且镓的含量等于或高于10原子％，低于35 以原子数比Ga /（In + Ga）等原子计。

公开(公告)号：US09670578B2

公开(公告)日：2017-06-06

申请号：US15117531

申请日：2015-02-12

Applicant: SUMITOMO METAL MINING CO., LTD.

Inventor： Tokuyuki Nakayama ,  Eiichiro Nishimura ,  Fumihiko Matsumura ,  Masashi Iwara

IPC: C04B35/453 ,  H01B1/02 ,  C23C14/34 ,  H01L21/02 ,  C04B35/01 ,  C23C14/08 ,  C23C14/58

CPC classification number: C23C14/3414 ,  C04B35/01 ,  C04B35/453 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/656 ,  C04B2235/76 ,  C04B2235/77 ,  C04B2235/80 ,  C23C14/08 ,  C23C14/086 ,  C23C14/5853 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631

Abstract: An oxide sintered body which, when made into an oxide semiconductor thin film by sputtering, can achieve low carrier density and high carrier mobility, and a sputtering target using said oxide sintered body are provided. This oxide sintered body contains indium, gallium and zinc as oxides. The gallium content is 0.08 or more and less than 0.20 in terms of Ga/(In+Ga) atomic ratio, and the zinc content is 0.0001 or more and less than 0.08 in terms of Zn/(In+Ga+Zn) atomic ratio. This crystalline oxide semiconductor thin film is formed with the oxide sintered body as a sputtering target, and can achieve a carrier density of 8.0×1017 cm−3 or less and a carrier mobility of 10 cm2/V·s or greater.

公开(公告)号：US10000842B2

公开(公告)日：2018-06-19

申请号：US15319578

申请日：2015-06-24

Applicant: SUMITOMO METAL MINING CO., LTD.

Inventor： Tokuyuki Nakayama ,  Eiichiro Nishimura ,  Fumihiko Matsumura ,  Masashi Iwara

IPC: H01L21/02 ,  C23C14/34 ,  C04B35/01 ,  C04B35/64 ,  C04B35/622 ,  H01L29/786 ,  H01L29/22 ,  H01L29/24 ,  H01L21/465 ,  H01J37/34 ,  C23C14/08

CPC classification number: C23C14/3414 ,  C04B35/01 ,  C04B35/62218 ,  C04B35/64 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3275 ,  C04B2235/3279 ,  C04B2235/3286 ,  C04B2235/3296 ,  C04B2235/5436 ,  C04B2235/604 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/6584 ,  C04B2235/6586 ,  C04B2235/76 ,  C04B2235/77 ,  C04B2235/80 ,  C04B2235/96 ,  C23C14/08 ,  C23C14/086 ,  C23C14/3407 ,  H01J37/3426 ,  H01J37/3429 ,  H01L21/02483 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02592 ,  H01L21/02631 ,  H01L21/465 ,  H01L29/2206 ,  H01L29/245 ,  H01L29/247 ,  H01L29/66969 ,  H01L29/78693

Abstract: Provided is an oxide sintered body that, when used to obtain an oxide semiconductor thin film by sputtering, can achieve a low carrier concentration and a high carrier mobility. Also provided is a sputtering target using the oxide sintered body. The oxide sintered body contains, as oxides, indium, gallium, and at least one positive divalent element selected from the group consisting of nickel, cobalt, calcium, strontium, and lead. The gallium content, in terms of the atomic ratio Ga/(In+Ga), is from 0.20 to 0.45, and the positive divalent element content, in terms of the atomic ratio M/(In+Ga+M), is from 0.0001 to 0.05. The amorphous oxide semiconductor thin film, which is formed using the oxide sintered body as a sputtering target, can achieve a carrier concentration of less than 3.0×1018 cm−3 and a carrier mobility of at least 10 cm2V−1 sec−1.

公开(公告)号：US09941415B2

公开(公告)日：2018-04-10

申请号：US15306915

申请日：2015-05-20

Applicant: SUMITOMO METAL MINING CO., LTD.

Inventor： Tokuyuki Nakayama ,  Eiichiro Nishimura ,  Fumihiko Matsumura ,  Masashi Iwara

IPC: H01L29/12 ,  H01L29/786 ,  C04B35/03 ,  C23C14/34 ,  C23C14/08 ,  H01L29/24 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/78693 ,  C04B35/01 ,  C04B35/03 ,  C04B35/6261 ,  C04B35/645 ,  C04B2235/3206 ,  C04B2235/3286 ,  C04B2235/5436 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/6585 ,  C04B2235/72 ,  C04B2235/76 ,  C04B2235/77 ,  C04B2235/80 ,  C23C14/08 ,  C23C14/082 ,  C23C14/34 ,  C23C14/3414 ,  H01J37/3426 ,  H01J2237/332 ,  H01L21/02422 ,  H01L21/02565 ,  H01L21/0257 ,  H01L21/02592 ,  H01L21/02631 ,  H01L21/02667 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869

Abstract: Provided are: a sintered oxide which achieves low carrier density and high carrier mobility when configured as an oxide semiconductor thin-film by using the sputtering method; and a sputtering target using the same. This sintered oxide contains indium, gallium and magnesium as oxides. It is preferable for the gallium content to be 0.20-0.45, inclusive, in terms of an atomic ratio (Ga/(In+Ga)), the magnesium content to be at least 0.0001 and less than 0.05 in terms of an atomic ratio (Mg/(In+Ga+Mg)), and the sintering to occur at 1,200-1,550° C., inclusive. An amorphous oxide semiconductor thin-film obtained by forming this sintered oxide as a sputtering target is capable of achieving a carrier density of less than 3.0×1018 cm−3, and a carrier mobility of 10 cm2V−1 sec−1 or higher.

公开(公告)号：US09543447B2

公开(公告)日：2017-01-10

申请号：US14773531

申请日：2014-03-06

Applicant: SUMITOMO METAL MINING CO., LTD.

Inventor： Eiichiro Nishimura ,  Tokuyuki Nakayama ,  Masashi Iwara

IPC: H01L29/786 ,  H01L21/02 ,  C01B21/082 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L29/7869 ,  C01B21/0821 ,  C01P2006/40 ,  H01L21/02521 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02667 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66969

Abstract: The purpose of the present invention is to provide an oxide semiconductor thin film, which has relatively high carrier mobility and is suitable as a channel layer material for a TFT, from an oxynitride crystalline thin film. According to the present invention, a crystalline oxynitride semiconductor thin film is obtained by annealing an amorphous oxynitride semiconductor thin film containing In, O, and N or an amorphous oxynitride semiconductor thin film containing In, O, N, and an additional element M, where M is one or more elements selected from among Zn, Ga, Ti, Si, Ge, Sn, W, Mg, Al, Y and rare earth elements, at a heating temperature of 200° C. or more for a heating time of 1 minute to 120 minutes.

Abstract translation: 本发明的目的是提供一种氧化物半导体薄膜，其具有相对高的载流子迁移率，并且适合作为来自氮氧化物晶体薄膜的TFT的沟道层材料。 根据本发明，通过对包含In，O和N的非晶氮氧化物半导体薄膜或含有In，O，N和附加元素M的非晶氮氧化物半导体薄膜进行退火，得到结晶氮氧化物半导体薄膜，其中 M是选自Zn，Ga，Ti，Si，Ge，Sn，W，Mg，Al，Y和稀土元素中的一种或多种元素，加热温度为200℃以上，加热时间为1 分钟至120分钟。

公开(公告)号：US09368639B2

公开(公告)日：2016-06-14

申请号：US14646869

申请日：2013-11-21

Applicant: SUMITOMO METAL MINING CO., LTD.

Inventor： Tokuyuki Nakayama

IPC: H01L29/00 ,  H01L29/786 ,  H01L21/02 ,  H01L29/66 ,  C23C14/08 ,  H01L29/24 ,  C23C14/34 ,  C23C14/58 ,  H01L29/04

CPC classification number: H01L29/7869 ,  C23C14/08 ,  C23C14/3414 ,  C23C14/5806 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02488 ,  H01L21/02565 ,  H01L21/02592 ,  H01L21/02631 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66742 ,  H01L29/786 ,  H01L29/78693

Abstract: An oxide crystalline thin film is used to provide an oxide semiconductor thin film that has comparatively high carrier mobility and is suitable as TFT channel layer material. Oxide semiconductor thin film is obtained by performing an annealing process on an amorphous oxide semiconductor thin film comprising an oxide including indium and titanium where the titanium content is 0.005 to 0.12 by a Ti/In atomic ratio at a heating temperature of 250° C. or greater and processing time of 1 minute to 120 minutes. The oxide semiconductor thin film is crystalline and comprises only the In2O3 phase of bixbyite type structure, and has carrier density that is 1×1019 cm−3, and carrier mobility that is 1 cm2/Vsec or greater.

Abstract translation: 使用氧化物晶体薄膜来提供具有较高载流子迁移率且适合作为TFT沟道层材料的氧化物半导体薄膜。 氧化物半导体薄膜通过对包含铟和钛的氧化物的非晶氧化物半导体薄膜进行退火处理，钛的含量为0.005至0.12，Ti / In原子比在加热温度为250℃，或 更大的处理时间为1分钟至120分钟。 氧化物半导体薄膜是结晶的，并且仅包含双峰型结构的In 2 O 3相，并且载流子密度为1×10 19 cm -3，载流子迁移率为1cm 2 / Vsec以上。

公开(公告)号：US20150279943A1

公开(公告)日：2015-10-01

申请号：US14434939

申请日：2013-10-10

Applicant: SUMITOMO METAL MINING CO., LTD.

Inventor： Tokuyuki Nakayama

IPC: H01L29/24 ,  H01L29/786

CPC classification number: H01L29/24 ,  H01L29/04 ,  H01L29/66969 ,  H01L29/7869

Abstract: An oxide crystalline thin film having a comparatively high carrier mobility and suitable as TFT channel layer material is provided. The oxide semiconductor thin film of the present invention comprises an oxide that includes indium and tungsten, with the tungsten content in the W/In atomic ratio being 0.005 to 0.12, is crystalline, comprises only the In2O3 phase of bixbyite structure, and has a carrier density of 1×1018 cm−3 or less and a carrier mobility of higher than 1 cm2/Vsec. The oxide is able to include zinc further with the zinc content in the Z/In atomic ratio of 0.05 or less.

Abstract translation: 提供具有较高载流子迁移率且适合作为TFT沟道层材料的氧化物晶体薄膜。 本发明的氧化物半导体薄膜包含含有铟和钨的氧化物，W / In原子比为0.005〜0.12的钨含量为结晶，仅包含双峰结构的In 2 O 3相，并具有载体 密度为1×1018 cm -3以下，载流子迁移率高于1cm2 / Vsec。 氧化物能够进一步包含Z / In原子比为0.05以下的锌含量。