发明授权
- 专利标题： Semiconductor structure and fabrication method thereof
- 专利标题（中）： 半导体结构及其制造方法
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申请号： US13271256申请日： 2011-10-12
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公开(公告)号： US08802579B2公开(公告)日： 2014-08-12
- 发明人: Chien-Liang Lin , Shao-Wei Wang , Yu-Ren Wang , Ying-Wei Yen
- 申请人： Chien-Liang Lin , Shao-Wei Wang , Yu-Ren Wang , Ying-Wei Yen
- 申请人地址： TW Science-Based Industrial Park, Hsin-Chu
- 专利权人： United Microelectronics Corp.
- 当前专利权人： United Microelectronics Corp.
- 当前专利权人地址： TW Science-Based Industrial Park, Hsin-Chu
- 代理商 Winston Hsu; Scott Margo
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/28 ; H01L21/02 ; H01L29/51 ; H01L29/66 ; H01L29/49
摘要：
A semiconductor process includes the following steps. A substrate is provided. A dielectric layer having a high dielectric constant is formed on the substrate, wherein the steps of forming the dielectric layer include: (a) a metallic oxide layer is formed; (b) an annealing process is performed to the metallic oxide layer; and the steps (a) and (b) are performed repeatedly. Otherwise, the present invention further provides a semiconductor structure formed by said semiconductor process.
公开/授权文献
- US20130093064A1 SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF 公开/授权日：2013-04-18