发明授权
- 专利标题： Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films
- 专利标题（中）： 包含碳氮化硅和碳氮氧化硅薄膜的含硅膜的低温化学气相沉积的组成和方法
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申请号： US12862739申请日： 2010-08-24
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公开(公告)号： US08802882B2公开(公告)日： 2014-08-12
- 发明人: Ziyun Wang , Chongying Xu , Bryan C. Hendrix , Jeffrey F. Roeder , Tianniu Chen , Thomas H. Baum
- 申请人： Ziyun Wang , Chongying Xu , Bryan C. Hendrix , Jeffrey F. Roeder , Tianniu Chen , Thomas H. Baum
- 申请人地址： US CT Danbury
- 专利权人： Advanced Technology Materials, Inc.
- 当前专利权人： Advanced Technology Materials, Inc.
- 当前专利权人地址： US CT Danbury
- 代理机构： Hultquist, PLLC
- 代理商 Steven J. Hultquist; Maggie Chappuis
- 主分类号： C07F7/10
- IPC分类号： C07F7/10
摘要：
Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g.,