发明授权
US08804417B2 Nonvolatile memory device including dummy memory cell and program method thereof
有权
包括虚拟存储器单元的非易失性存储器件及其程序方法
- 专利标题： Nonvolatile memory device including dummy memory cell and program method thereof
- 专利标题（中）： 包括虚拟存储器单元的非易失性存储器件及其程序方法
-
申请号： US13157343申请日： 2011-06-10
-
公开(公告)号： US08804417B2公开(公告)日： 2014-08-12
- 发明人: Chan Park , Changseok Kang , Sung-Il Chang , Byeong-In Choe
- 申请人： Chan Park , Changseok Kang , Sung-Il Chang , Byeong-In Choe
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： Volentine & Whitt, PLLC
- 优先权： KR10-2010-0055561 20100611
- 主分类号： G11C16/04
- IPC分类号： G11C16/04 ; G11C16/06 ; G11C16/08 ; G11C16/10 ; G11C16/12 ; G11C16/22
摘要：
A nonvolatile memory device including a dummy memory cell and a method of programming the same, wherein the nonvolatile memory device includes a dummy memory cell, and a plurality of memory cells serially connected to the dummy memory cell. The nonvolatile memory device sets a voltage provided to the dummy memory cell according to a distance between a selected memory cell among the plurality of memory cells and the dummy memory cell when a program operation is performed.