公开(公告)号：US08644074B2

公开(公告)日：2014-02-04

申请号：US13107139

申请日：2011-05-13

申请人： Sung-Il Chang ,  Changseok Kang ,  Chan Park ,  Byeong-In Choe

发明人： Sung-Il Chang ,  Changseok Kang ,  Chan Park ,  Byeong-In Choe

IPC分类号： G11C11/34

CPC分类号： G11C16/3418 ,  G11C16/0483

摘要： A nonvolatile memory device preventing a program disturb, a program method thereof and a memory system including the nonvolatile memory device and the program method. The nonvolatile memory device includes a memory cell array; first and second word lines connected to a NAND string in the memory cell array; a third word line connected to the NAND string, the third word line being disposed between the first and second word lines; a temperature sensor configured to measure the temperature of the nonvolatile memory device; and a voltage generator configured to generate first and second pass voltages and a program voltage, and the voltage level of at least one of the first and second pass voltages is controlled according to the measured temperature. When a program operation is performed, the program voltage is applied to the third word line, the first pass voltage is applied to the first word line, the second pass voltage is applied to the second word line.

摘要翻译： 一种防止程序干扰的非易失性存储器件，其程序方法和包括非易失性存储器件和程序方法的存储器系统。 非易失性存储器件包括存储单元阵列; 连接到存储单元阵列中的NAND串的第一和第二字线; 连接到NAND串的第三字线，第三字线设置在第一和第二字线之间; 温度传感器，被配置为测量所述非易失性存储装置的温度; 以及电压发生器，被配置为产生第一和第二通过电压和编程电压，并且根据测量的温度来控制第一和第二通过电压中的至少一个的电压电平。 当执行编程操作时，将编程电压施加到第三字线，将第一通过电压施加到第一字线，将第二通过电压施加到第二字线。

公开(公告)号：US20110286274A1

公开(公告)日：2011-11-24

申请号：US13107139

申请日：2011-05-13

申请人： Sung-Il Chang ,  Changseok Kang ,  Chan Park ,  Byeong-In Choe

发明人： Sung-Il Chang ,  Changseok Kang ,  Chan Park ,  Byeong-In Choe

IPC分类号： G11C16/10

CPC分类号： G11C16/3418 ,  G11C16/0483

摘要： A nonvolatile memory device preventing a program disturb, a program method thereof and a memory system including the nonvolatile memory device and the program method. The nonvolatile memory device includes a memory cell array; first and second word lines connected to a NAND string in the memory cell array; a third word line connected to the NAND string, the third word line being disposed between the first and second word lines; a temperature sensor configured to measure the temperature of the nonvolatile memory device; and a voltage generator configured to generate first and second pass voltages and a program voltage, and the voltage level of at least one of the first and second pass voltages is controlled according to the measured temperature. When a program operation is performed, the program voltage is applied to the third word line, the first pass voltage is applied to the first word line, the second pass voltage is applied to the second word line.

摘要翻译： 一种防止程序干扰的非易失性存储器件，其程序方法和包括非易失性存储器件和程序方法的存储器系统。 非易失性存储器件包括存储单元阵列; 连接到存储单元阵列中的NAND串的第一和第二字线; 连接到NAND串的第三字线，第三字线设置在第一和第二字线之间; 温度传感器，被配置为测量所述非易失性存储装置的温度; 以及电压发生器，被配置为产生第一和第二通过电压和编程电压，并且根据测量的温度来控制第一和第二通过电压中的至少一个的电压电平。 当执行编程操作时，将编程电压施加到第三字线，将第一通过电压施加到第一字线，将第二通过电压施加到第二字线。

公开(公告)号：US08804417B2

公开(公告)日：2014-08-12

申请号：US13157343

申请日：2011-06-10

申请人： Chan Park ,  Changseok Kang ,  Sung-Il Chang ,  Byeong-In Choe

发明人： Chan Park ,  Changseok Kang ,  Sung-Il Chang ,  Byeong-In Choe

IPC分类号： G11C16/04 ,  G11C16/06 ,  G11C16/08 ,  G11C16/10 ,  G11C16/12 ,  G11C16/22

CPC分类号： G11C16/10 ,  G11C16/3418

摘要： A nonvolatile memory device including a dummy memory cell and a method of programming the same, wherein the nonvolatile memory device includes a dummy memory cell, and a plurality of memory cells serially connected to the dummy memory cell. The nonvolatile memory device sets a voltage provided to the dummy memory cell according to a distance between a selected memory cell among the plurality of memory cells and the dummy memory cell when a program operation is performed.

摘要翻译： 一种包括虚拟存储单元的非易失性存储器件及其编程方法，其中非易失性存储器件包括一个虚拟存储单元和与该虚拟存储单元串联连接的多个存储单元。 非易失性存储装置根据执行程序操作时的多个存储单元中的所选择的存储单元与虚拟存储单元之间的距离，设定提供给虚拟存储单元的电压。

公开(公告)号：US20110305079A1

公开(公告)日：2011-12-15

申请号：US13157343

申请日：2011-06-10

申请人： Chan Park ,  Changseok Kang ,  Sung-Il Chang ,  Byeong-In Choe

发明人： Chan Park ,  Changseok Kang ,  Sung-Il Chang ,  Byeong-In Choe

IPC分类号： G11C16/10

CPC分类号： G11C16/10 ,  G11C16/3418

摘要： A nonvolatile memory device including a dummy memory cell and a method of programming the same, wherein the nonvolatile memory device includes a dummy memory cell, and a plurality of memory cells serially connected to the dummy memory cell. The nonvolatile memory device sets a voltage provided to the dummy memory cell according to a distance between a selected memory cell among the plurality of memory cells and the dummy memory cell when a program operation is performed.

摘要翻译： 一种包括虚拟存储单元的非易失性存储器件及其编程方法，其中非易失性存储器件包括一个虚拟存储单元和与该虚拟存储单元串联连接的多个存储单元。 非易失性存储装置根据执行程序操作时的多个存储单元中的所选择的存储单元与虚拟存储单元之间的距离，设定提供给虚拟存储单元的电压。

公开(公告)号：US08379456B2

公开(公告)日：2013-02-19

申请号：US12901605

申请日：2010-10-11

申请人： Chan Park ,  Changseok Kang ,  Sung-Il Chang ,  Youngwoo Park ,  Jongsun Sel ,  Jintaek Park

发明人： Chan Park ,  Changseok Kang ,  Sung-Il Chang ,  Youngwoo Park ,  Jongsun Sel ,  Jintaek Park

IPC分类号： G11C11/34

CPC分类号： G11C16/0483 ,  G11C11/5621 ,  G11C11/5628 ,  G11C16/10

摘要： Provided are nonvolatile memory devices and methods of operating thereof. The nonvolatile memory devices include: dummy cells connected to a dummy bit line; and a dummy bit line bias circuit providing a dummy bit line voltage to the dummy bit line during a program operation, wherein, due to the dummy bit line voltage, at least one of the dummy cells is programmed with a threshold voltage lower than the top programmed state and higher than an erased state during the program operation.

摘要翻译： 提供了非易失性存储器件及其操作方法。 非易失性存储器件包括：连接到虚拟位线的虚拟单元; 以及在编程操作期间向虚拟位线提供虚拟位线电压的虚拟位线偏置电路，其中，由于虚拟位线电压，至少一个虚设单元被编程为具有低于顶部的阈值电压 在程序运行期间高于擦除状态。

公开(公告)号：US20110085385A1

公开(公告)日：2011-04-14

申请号：US12901605

申请日：2010-10-11

申请人： Chan Park ,  Changseok Kang ,  Sung-Il Chang ,  Youngwoo Park ,  Jongsun Sel ,  Jintaek Park

发明人： Chan Park ,  Changseok Kang ,  Sung-Il Chang ,  Youngwoo Park ,  Jongsun Sel ,  Jintaek Park

IPC分类号： G11C16/06

CPC分类号： G11C16/0483 ,  G11C11/5621 ,  G11C11/5628 ,  G11C16/10

摘要： Provided are nonvolatile memory devices and methods of operating thereof. The nonvolatile memory devices include: dummy cells connected to a dummy bit line; and a dummy bit line bias circuit providing a dummy bit line voltage to the dummy bit line during a program operation, wherein, due to the dummy bit line voltage, at least one of the dummy cells is programmed with a threshold voltage lower than the top programmed state and higher than an erased state during the program operation.

摘要翻译： 提供了非易失性存储器件及其操作方法。 非易失性存储器件包括：连接到虚拟位线的虚拟单元; 以及在编程操作期间向虚拟位线提供虚拟位线电压的虚拟位线偏置电路，其中，由于虚拟位线电压，至少一个虚设单元被编程为具有低于顶部的阈值电压 在程序运行期间高于擦除状态。

公开(公告)号：US08322019B2

公开(公告)日：2012-12-04

申请号：US12997652

申请日：2010-07-05

申请人： Kyeong Dal Choi ,  Ji Kwang Lee ,  Woo Seok Kim ,  Chan Park ,  Yung Il Kim

发明人： Kyeong Dal Choi ,  Ji Kwang Lee ,  Woo Seok Kim ,  Chan Park ,  Yung Il Kim

IPC分类号： H01B13/02 ,  H01B7/30 ,  H01B12/06 ,  H01B12/08

CPC分类号： H01B12/02 ,  H01B7/306 ,  Y02E40/641 ,  Y10T29/49014 ,  Y10T29/49194

摘要： Provided is a multiple transposition method for superconducting wire, by making each superconducting wire unit from second-generation superconducting wires that were firstly transposed and then transposing each superconducting wire unit in such a manner that the phase of each unit can be changed along the length, comprising preparing wires by making curves on superconducting wires in such a manner that the superconducting wires of a thin multiple layer grown epitaxially are slit in zigzags and then making the curves repeatedly and by machining the wires with a desired length; making first-transposed superconducting wire units by combining a plurality of the prepared wires such that curves of adjacent wires come in touch to each other and are superposed; preparing a superconducting wire unit bundle by arranging the first-transposed superconducting wires units and by locating a plurality of the first-transposed superconducting wire units in parallel along the length; and making a second transposition on the first-transposed superconducting wire units by rotating the plurality of superconducting wire units on the central axis of the superconducting wire unit bundle along the length to be twisted and combined with each other.

摘要翻译： 提供了一种用于超导线的多重转置方法，通过使来自第二代超导线的每个超导线单元首先被转置，然后以每个单元的相位沿着该长度改变的方式移位每个超导线单元， 包括通过在超导线上制作曲线来制备导线，使得外延生长的薄多层的超导线以锯齿形切割，然后反复制作曲线并通过机加工所需长度的线; 通过组合多个所制备的导线使相邻导线的曲线彼此接触并重叠而制造第一转置超导线单元; 通过布置第一转置超导线单元并通过沿着长度平行地定位多个第一转置的超导线单元来制备超导线单元束; 以及通过在所述超导线单元束的中心轴线上沿着要被扭曲并且彼此组合的长度旋转所述多个超导线单元，在所述第一转置的超导线单元上进行第二转置。

公开(公告)号：US20120273477A1

公开(公告)日：2012-11-01

申请号：US13456897

申请日：2012-04-26

申请人： Guen Yong PARK ,  Jae Hyoun Kim ,  Cheol Jin Kim ,  Han Seong Kang ,  Jin Hae Cho ,  Eun Oh Kim ,  Chan Park ,  Dong-Ho Lee

发明人： Guen Yong PARK ,  Jae Hyoun Kim ,  Cheol Jin Kim ,  Han Seong Kang ,  Jin Hae Cho ,  Eun Oh Kim ,  Chan Park ,  Dong-Ho Lee

IPC分类号： A47J27/21 ,  H05B3/02

CPC分类号： F24C15/327

摘要： A steam cooking apparatus with improved water supply and drainage structures. The apparatus includes a body, a cooking compartment, a steam generator to supply steam into the cooking compartment, a water vessel to store water and supply the water into the steam generator, a water supply device including a holder and a slider slidably mounted in the holder so as to be withdrawn from the body, a first water supply tube connecting the slider and the water vessel, a second water supply tube connecting the water vessel and the steam generator, and a drain tube to drain water in the steam generator to the outside of the body. The drain tube includes an end fixed to the slider so that the end of the drain tube is withdrawn with the slider from the body when water in the steam generator is drained to the outside.

摘要翻译： 具有改善给排水结构的蒸汽烹饪设备。 该装置包括主体，烹饪室，蒸汽发生器，以将蒸汽供应到烹饪室中，水容器，用于存储水并将水供应到蒸汽发生器中;供水装置，其包括保持器和可滑动地安装在所述蒸汽发生器中的滑块 保持器，以便从身体中取出，连接滑块和水容器的第一供水管，连接水容器和蒸汽发生器的第二供水管和排水管，以将蒸汽发生器中的水排出到 身体外。 排水管包括固定到滑块的端部，使得当蒸汽发生器中的水排出到外部时，排水管的端部与滑块一起从主体被抽出。

公开(公告)号：US20120068389A1

公开(公告)日：2012-03-22

申请号：US13064222

申请日：2011-03-11

申请人： Chan Park ,  Wook Jo ,  Jin-Sang Kim ,  O-Jong Kwon

发明人： Chan Park ,  Wook Jo ,  Jin-Sang Kim ,  O-Jong Kwon

IPC分类号： C04B35/645

CPC分类号： C04B35/01 ,  B32B18/00 ,  C04B35/6268 ,  C04B35/645 ,  C04B2235/3201 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3272 ,  C04B2235/3275 ,  C04B2235/5292 ,  C04B2235/604 ,  C04B2235/612 ,  C04B2235/663 ,  C04B2235/666 ,  C04B2235/787

摘要： Provided is a method of fabricating polycrystalline ceramic for thermoelectric devices. The method includes preparing calcined ceramic powders, forming a ceramic sheet by uni-axially pressing the calcined ceramic powders, stacking a plurality of the ceramic sheets in a uni-axial direction, and cofiring the stacked the plurality of the ceramic sheets.

摘要翻译： 提供一种制造用于热电装置的多晶陶瓷的方法。 该方法包括制备煅烧陶瓷粉末，通过单轴压制煅烧陶瓷粉末，沿单轴方向堆叠多个陶瓷片材，并共烧多个陶瓷片材，形成陶瓷片材。

公开(公告)号：US08089332B2

公开(公告)日：2012-01-03

申请号：US12679697

申请日：2009-11-19

申请人： Kyeong-Dal Choi ,  Ji-Kwang Lee ,  Woo-Seok Kim ,  Chan Park ,  Sun-Bok Choi

发明人： Kyeong-Dal Choi ,  Ji-Kwang Lee ,  Woo-Seok Kim ,  Chan Park ,  Sun-Bok Choi

IPC分类号： H01F27/02

CPC分类号： H01F36/00 ,  H01F6/065 ,  Y02E40/66

摘要： The present invention relates to a superconducting power transforming apparatus. The superconducting power transforming apparatus according to the present invention comprises a transformer housing having a transforming cable passing hole and filled with a liquid cooling means; a superconducting transformer housed in the transformer housing in a state that the superconducting transformer is immersed in the liquid cooling means; a tap changer housing having a tap changing cable passing hole and vacuum-sealed from outside; a power tap changer housed in the vacuum tap changer housing; and a cable linking pipe vacuum-sealed from the transformer housing and the tap changer housing, and linking the transforming cable passing hole with the tap changing passing hole in order that a transformer winding tap cable connecting the superconducting transformer and the power tap changer passes through. Consequently, it is possible to guarantee stable operation of a superconducting transformer which works at an extremely low temperature and a power tap changer as like On-Load Tap Changer which works at low temperature.

摘要翻译： 本发明涉及一种超导功率变换装置。 根据本发明的超导电力变换装置包括具有变换电缆通孔并且充满液体冷却装置的变压器壳体; 以超导变压器浸入液体冷却装置的状态容纳在变压器外壳中的超导变压器; 分接开关壳体，具有抽头更换电缆通孔并从外部真空密封; 一个容纳在真空分接开关壳体中的电源分接开关; 以及从变压器壳体和分接开关壳体真空密封的电缆连接管，并将变压电缆通孔与抽头更换通孔相连接，以便连接超导变压器和电源分接开关的变压器绕组电缆通过 。 因此，可以保证在极低温度下工作的超导变压器的稳定运行，以及在低温工作的有载分接开关的功率抽头变换器。