Semiconductor devices comprising a plurality of gate structures

Invention Grant

US08809146B2 Semiconductor devices comprising a plurality of gate structures 有权

Title translation: 包括多个栅极结构的半导体器件

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Patent Title: Semiconductor devices comprising a plurality of gate structures
Patent Title (中): 包括多个栅极结构的半导体器件
Application No.: US13751679

Application Date: 2013-01-28
Publication No.: US08809146B2

Publication Date: 2014-08-19
Inventor: Daewoong Kang , Sungnam Chang , JinJoo Kim , Kyongjoo Lee , Eun-Jung Lee
Applicant: Samsung Electronics Co., Ltd.
Applicant Address: KR
Assignee: Samsung Electronics Co., Ltd.
Current Assignee: Samsung Electronics Co., Ltd.
Current Assignee Address: KR
Agency: Myers Bigel Sibley & Sajovec, PA
Priority: KR10-2005-0103107 20051031
Main IPC: H01L21/336
IPC: H01L21/336

Semiconductor devices comprising a plurality of gate structures

Abstract:

Methods for forming semiconductor memory structures including a gap between adjacent gate structures are provided. The methods may include forming an insulation layer between the adjacent gate structures. In some embodiments, the methods may include subsequently removing a portion of the insulation layer to leave the gap between the adjacent gate structures.

Abstract(Chinese):

提供了用于形成包括相邻栅极结构之间的间隙的半导体存储器结构的方法。所述方法可以包括在相邻栅极结构之间形成绝缘层。在一些实施例中，所述方法可以包括随后去除绝缘层的一部分以留下相邻栅极结构之间的间隙。

Public/Granted literature

US20130178044A1 SEMICONDUCTOR DEVICES COMPRISING A PLURALITY OF GATE STRUCTURES Public/Granted day:2013-07-11

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/334	....制造单极型器件的台阶式工艺
H01L21/335	.....场效应晶体管
H01L21/336	......带有绝缘栅的