公开(公告)号：US20130178044A1

公开(公告)日：2013-07-11

申请号：US13751679

申请日：2013-01-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Daewoong KANG ,  Sungnam Chang ,  JinJoo Kim ,  Kyongjoo Lee ,  Eun-Jung Lee

IPC: H01L21/76

CPC classification number: H01L21/76 ,  H01L21/764 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/11568

Abstract: Methods for forming semiconductor memory structures including a gap between adjacent gate structures are provided. The methods may include forming an insulation layer between the adjacent gate structures. In some embodiments, the methods may include subsequently removing a portion of the insulation layer to leave the gap between the adjacent gate structures.

Abstract translation: 提供了用于形成包括相邻栅极结构之间的间隙的半导体存储器结构的方法。 所述方法可以包括在相邻栅极结构之间形成绝缘层。 在一些实施例中，所述方法可以包括随后去除绝缘层的一部分以留下相邻栅极结构之间的间隙。

公开(公告)号：US08809146B2

公开(公告)日：2014-08-19

申请号：US13751679

申请日：2013-01-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Daewoong Kang ,  Sungnam Chang ,  JinJoo Kim ,  Kyongjoo Lee ,  Eun-Jung Lee

IPC: H01L21/336

CPC classification number: H01L21/76 ,  H01L21/764 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/11568

Abstract: Methods for forming semiconductor memory structures including a gap between adjacent gate structures are provided. The methods may include forming an insulation layer between the adjacent gate structures. In some embodiments, the methods may include subsequently removing a portion of the insulation layer to leave the gap between the adjacent gate structures.

Abstract translation: 提供了用于形成包括相邻栅极结构之间的间隙的半导体存储器结构的方法。 所述方法可以包括在相邻栅极结构之间形成绝缘层。 在一些实施例中，所述方法可以包括随后去除绝缘层的一部分以留下相邻栅极结构之间的间隙。