Invention Grant
- Patent Title: Lateral trench transistor, as well as a method for its production
- Patent Title (中): 横向沟槽晶体管，以及其生产方法
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Application No.: US13803291Application Date: 2013-03-14
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Publication No.: US08815686B2Publication Date: 2014-08-26
- Inventor: Franz Hirler , Uwe Wahl , Thorsten Meyer , Michael Rüb , Armin Willmeroth , Markus Schmitt , Carolin Tolksdorf , Carsten Schaeffer
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102004052643 20041029
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A method for production of doped semiconductor regions in a semiconductor body of a lateral trench transistor includes forming a trench in the semiconductor body and introducing dopants into at least one area of the semiconductor body that is adjacent to the trench, by carrying out a process in which dopants enter the at least one area through inner walls of the trench.
Public/Granted literature
- US20130224921A1 LATERAL TRENCH TRANSISTOR, AS WELL AS A METHOD FOR ITS PRODUCTION Public/Granted day:2013-08-29
Information query
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