发明授权
- 专利标题: Reducing damage to low-K materials during photoresist stripping
- 专利标题(中): 在光刻胶剥离期间减少对低K材料的损伤
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申请号: US12360765申请日: 2009-01-27
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公开(公告)号: US08815745B2公开(公告)日: 2014-08-26
- 发明人: Sean S. Kang , Sang Jun Cho , Thomas S. Choi
- 申请人: Sean S. Kang , Sang Jun Cho , Thomas S. Choi
- 申请人地址: US CA Fremont
- 专利权人: Lam Research Corporation
- 当前专利权人: Lam Research Corporation
- 当前专利权人地址: US CA Fremont
- 代理机构: Beyer Law Group LLP
- 主分类号: H01L21/302
- IPC分类号: H01L21/302
摘要:
A method of forming features in a porous low-k dielectric layer disposed below a patterned organic mask is provided. Features are etched into the porous low-k dielectric layer through the patterned organic mask, and then the patterned organic mask is stripped. The stripping of the patterned organic mask includes providing a stripping gas comprising COS, forming a plasma from the stripping gas, and stopping the stripping gas. A cap layer may be provided between the porous low-k dielectric layer and the patterned organic mask. The stripping of the patterned organic mask leaves the cap layer on the porous low-k dielectric layer.