发明授权
- 专利标题： Semiconductor device having a laser annealed semiconductor layer
- 专利标题（中）： 具有激光退火半导体层的半导体器件
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申请号： US13301374申请日： 2011-11-21
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公开(公告)号： US08816351B2公开(公告)日： 2014-08-26
- 发明人: Kian Kiat Lim , Atsushi Nakamura , Kai Pheng Tan , Eng Soon Lim , Poh Ling Fu , Takaaki Kamimura
- 申请人： Kian Kiat Lim , Atsushi Nakamura , Kai Pheng Tan , Eng Soon Lim , Poh Ling Fu , Takaaki Kamimura
- 申请人地址： JP Tokyo
- 专利权人： Japan Display Inc.
- 当前专利权人： Japan Display Inc.
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： SG200802817-7 20080409
- 主分类号： H01L27/14
- IPC分类号： H01L27/14
摘要：
A laser annealing method includes forming a nitrogen-doped layer on a semiconductor layer, the nitrogen-doped layer having a nitrogen concentration of at least 3×1020 atoms/cc, irradiating a first area of the nitrogen-doped layer in a low oxygen environment with a laser beam and irradiating a second area of the nitrogen-doped layer in a low oxygen environment with a laser beam, a part of the second area overlapping with the first area.
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