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    Liquid crystal display device, matrix array substrate, and method for manufacturing matrix array substrate
    5.
    发明授权
    Liquid crystal display device, matrix array substrate, and method for manufacturing matrix array substrate 失效
    液晶显示装置，矩阵阵列基板和矩阵阵列基板的制造方法

    公开(公告)号：US06624864B1

    公开(公告)日：2003-09-23

    申请号：US09293936

    申请日：1999-04-19

    申请人： Akira Kubo ,  Takaaki Kamimura ,  Masayuki Dojo ,  Kiyotsugu Mizouchi ,  Masahiko Machida ,  Shigeyuki Motokawa ,  Tomoki Miyaji

    发明人： Akira Kubo ,  Takaaki Kamimura ,  Masayuki Dojo ,  Kiyotsugu Mizouchi ,  Masahiko Machida ,  Shigeyuki Motokawa ,  Tomoki Miyaji

    IPC分类号： G02F11343

    CPC分类号： G02F1/13458 ,  G02F1/1362 ,  G02F1/136286 ,  G02F2001/136231

    摘要： An object of the present invention is to simplify steps for manufacturing a matrix array substrate by reducing the number of masks being necessary to manufacture and to improve yield ratio of the matrix array substrate. According to the present invention, on a glass substrate, scanning lines, signal lines, a first insulated film, a second insulated film, an unprocessed semiconductor film, an unprocessed channel protective film, unprocessed low resistance semiconductor film, and Mo/Al/Mo laminated film are formed. Then, the source electrodes, the drain electrodes, the signal lines, a semiconductor film, and a low resistance semiconductor film are formed at a time by patterning using a common mask pattern. Display pixel electrodes cover upper surfaces of the source electrodes, the drain electrodes, the semiconductor film, the scanning line pads, and the signal line pads. Edge lines of the source electrodes, the low resistance semiconductor film, and the semiconductor film are aligned, and edge lines of the drain electrodes, the low resistance semiconductor film and the semiconductor film are aligned.

    摘要翻译： 本发明的目的是通过减少制造所需的掩模的数量和提高矩阵阵列基板的屈服比来简化制造矩阵阵列基板的步骤。 根据本发明，在玻璃基板上，扫描线，信号线，第一绝缘膜，第二绝缘膜，未处理的半导体膜，未加工的沟道保护膜，未加工的低电阻半导体膜以及Mo / Al / Mo 形成层叠膜。 然后，通过使用公共掩模图案进行图案化，一次形成源电极，漏电极，信号线，半导体膜和低电阻半导体膜。 显示像素电极覆盖源电极，漏电极，半导体膜，扫描线焊盘和信号线焊盘的上表面。 排列源电极，低电阻半导体膜和半导体膜的边缘线，并排列漏电极，低电阻半导体膜和半导体膜的边缘线。

    Thin film transistor with nitrogen concentration gradient
    6.
    发明授权
    Thin film transistor with nitrogen concentration gradient 失效
    具有氮浓度梯度的薄膜晶体管

    公开(公告)号：US5311040A

    公开(公告)日：1994-05-10

    申请号：US070055

    申请日：1993-06-01

    申请人： Masato Hiramatsu ,  Takaaki Kamimura ,  Mitsuo Nakajima

    发明人： Masato Hiramatsu ,  Takaaki Kamimura ,  Mitsuo Nakajima

    IPC分类号： H01L21/20 ,  H01L29/45 ,  H01L29/78 ,  H01L29/786 ,  H01L29/04 ,  H01L29/167 ,  H01L29/36 ,  H01L29/76

    CPC分类号： H01L29/458 ,  H01L29/7866

    摘要： An inverted stagger thin film transistor includes an insulating substrate, a silicon active layer formed thereon, source and drain ohmic contact layers, source and drain electrodes respectively contacting the source and drain ohmic contact layers, and a gate electrode opposite to the channel region of the active layer through a gate insulating film. An auxiliary film consisting of a silicon film doped with nitrogen is formed in the surface of the active layer, and the ohmic contact layers contact the auxiliary film. The auxiliary film can be continuously formed from the active layer to the ohmic contact layers, thereby improving a junction state between the active layer and the ohmic contact layers.

    摘要翻译： 反相交错薄膜晶体管包括绝缘基板，形成在其上的硅有源层，源极和漏极欧姆接触层，分别接触源极和漏极欧姆接触层的源极和漏极，以及与漏极和漏极欧姆接触层相对的栅电极 有源层通过栅极绝缘膜。 在有源层的表面形成由掺杂有氮的硅膜构成的辅助膜，并且欧姆接触层与辅助膜接触。 辅助膜可以从有源层连续地形成到欧姆接触层，从而改善有源层和欧姆接触层之间的连接状态。

    Array substrate for liquid crystal display element
    7.
    发明授权
    Array substrate for liquid crystal display element 失效
    液晶显示元件用阵列基板

    公开(公告)号：US06337726B1

    公开(公告)日：2002-01-08

    申请号：US09255714

    申请日：1999-02-23

    申请人： Hideo Kawano ,  Takaaki Kamimura

    发明人： Hideo Kawano ,  Takaaki Kamimura

    IPC分类号： G02F11343

    CPC分类号： G02F1/134363

    摘要： A number of pixel regions surrounded by scanning signal lines and display signal lines are defined on an array substrate of a liquid crystal display element. Formed in each pixel region are a display pixel electrode extending in parallel with the display signal lines and two opposite electrodes provided on both sides of the display pixel electrode and extending in parallel with the display pixel electrode. Each of the two opposite electrodes is provided at a predetermined interval from the display pixel electrode. An end of the display pixel electrode is layered over an opposite signal line, thereby constituting a first supplemental capacity, and another end thereof is electrically connected to a switching element. An end of each opposite electrode is electrically connected to an opposite signal line. The display pixel electrode and the opposite electrodes are formed by processing the same conductive layer as that forming the display signal lines.

    摘要翻译： 由扫描信号线和显示信号线围绕的多个像素区域被限定在液晶显示元件的阵列基板上。 在每个像素区域中形成有与显示信号线平行延伸的显示像素电极和设置在显示像素电极两侧并与显示像素电极平行延伸的两个相对电极。 两个相对电极中的每一个以与显示像素电极预定的间隔设置。 显示像素电极的一端在相反的信号线上分层，从而构成第一补充容量，并且其另一端电连接到开关元件。 每个相对电极的端部电连接到相对的信号线。 通过处理与形成显示信号线的导电层相同的导电层来形成显示像素电极和相对电极。

    Method of manufacturing active matrix display
    8.
    发明授权
    Method of manufacturing active matrix display 失效
    有源矩阵显示器的制造方法

    公开(公告)号：US5888855A

    公开(公告)日：1999-03-30

    申请号：US572334

    申请日：1995-12-14

    申请人： Nobuya Nagahisa ,  Takaaki Kamimura ,  Kunio Matumura ,  Takayoshi Dohi

    发明人： Nobuya Nagahisa ,  Takaaki Kamimura ,  Kunio Matumura ,  Takayoshi Dohi

    IPC分类号： G02F1/136 ,  G02F1/1368 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/49 ,  H01L29/786

    CPC分类号： H01L27/1214 ,  G02F1/1368 ,  H01L29/4908 ,  H01L29/78669 ,  H01L29/78696

    摘要： The present invention has a semiconductor device including a substrate made of an insulating material, a gate electrode formed on the substrate, a thin film made of a silicon semiconductor and formed on the gate electrode through a gate insulating film, a protective film formed on the thin film and having two opposing major surfaces, and a source electrode and a drain electrode formed to be electrically connected with the thin film, wherein the first major surface of the two major surfaces of the protective film is in contact with the thin film, and a region near the second major surface of the protective film contains oxygen. The present invention has a method of manufacturing a semiconductor device, in which a gate electrode is on a substrate made of an insulating material, a thin film made of a silicon semiconductor is formed on the gate electrode through a gate insulating film, a protective film having two opposing major surfaces in which a first major surface is in contact with the thin film and a region near a second major surface contains oxygen is formed on the thin film, and a source electrode and a drain electrode are formed to electrically connect with the thin film.

    摘要翻译： 本发明的半导体器件包括由绝缘材料制成的衬底，形成在衬底上的栅电极，由硅半导体制成的薄膜，并通过栅极绝缘膜形成在栅电极上，形成在保护膜上的保护膜 薄膜，具有两个相对的主表面，以及形成为与薄膜电连接的源电极和漏电极，其中保护膜的两个主表面的第一主表面与薄膜接触，以及 保护膜的第二主表面附近的区域含有氧。 本发明涉及一种半导体器件的制造方法，其中栅极位于由绝缘材料制成的衬底上，通过栅极绝缘膜在栅电极上形成由硅半导体制成的薄膜，保护膜 具有两个相对的主表面，其中第一主表面与薄膜接触，并且在薄膜上形成包含氧的第二主表面附近的区域，并且形成源电极和漏电极以与 薄膜。

    Integrated circuit device having an insulating substrate, and a liquid crystal display device having an insulating substrate
    9.
    发明授权
    Integrated circuit device having an insulating substrate, and a liquid crystal display device having an insulating substrate 失效
    具有绝缘基板的集成电路装置和具有绝缘基板的液晶显示装置

    公开(公告)号：US5585647A

    公开(公告)日：1996-12-17

    申请号：US266467

    申请日：1994-06-27

    申请人： Mitsuo Nakajima ,  Mitsuaki Suzuki ,  Takaaki Kamimura ,  Yoshito Kawakyu

    发明人： Mitsuo Nakajima ,  Mitsuaki Suzuki ,  Takaaki Kamimura ,  Yoshito Kawakyu

    IPC分类号： G02F1/136 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786 ,  H01L31/0392 ,  H01L31/20 ,  H01L31/113 ,  G02F1/1343

    CPC分类号： H01L27/1251 ,  H01L27/1214

    摘要： A thin-film transistor device comprising a pixel section including a plurality of pixel electrodes arranged in rows and columns on a substrate and a plurality of thin-film transistors of reverse stagger type, connected as switching elements to the pixel electrodes, respectively, and a drive section including a plurality of thin-film transistors of coplanar type, each having a gate insulating film, for driving the thin-film transistors of the reverse stagger type. A lower insulating film is located beneath the thin-film transistors of the reverse stagger type. The lower insulating film and the gate insulating films of the thin-film transistors of the coplanar type are formed of a first insulating film provided on the substrate.

    摘要翻译： 一种薄膜晶体管器件，包括：像素部分，其包括在衬底上排列成行和列的多个像素电极;以及反向交错型的多个薄膜晶体管，分别作为开关元件连接到像素电极;以及 驱动部分包括共面型的多个薄膜晶体管，每个具有栅极绝缘膜，用于驱动反向交错型薄膜晶体管。 下部绝缘膜位于反向交错型薄膜晶体管的下方。 共面型薄膜晶体管的下绝缘膜和栅极绝缘膜由设置在基板上的第一绝缘膜形成。