发明授权
- 专利标题： E-mode high electron mobility transistor and method of manufacturing the same
- 专利标题（中）： E型高电子迁移率晶体管及其制造方法
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申请号： US13222322申请日： 2011-08-31
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公开(公告)号： US08816396B2公开(公告)日： 2014-08-26
- 发明人: In-jun Hwang , Jong-seob Kim , Hyuk-soon Choi , Ki-ha Hong , Jai-kwang Shin , Jae-joon Oh
- 申请人： In-jun Hwang , Jong-seob Kim , Hyuk-soon Choi , Ki-ha Hong , Jai-kwang Shin , Jae-joon Oh
- 申请人地址： KR Gyeonggi-Do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-Do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2010-0098995 20101011
- 主分类号： H01L29/778
- IPC分类号： H01L29/778
摘要：
According to an example embodiment, a high electron mobility transistor (HEMT) includes a substrate, a buffer layer on the substrate, a channel layer on the buffer layer, and a barrier structure on the channel layer. The buffer layer includes a 2-dimensional electron gas (2DEG). A polarization of the barrier structure varies in a region corresponding to a gate electrode. The HEMT further includes and the gate electrode, a source electrode, and a drain electrode on the barrier structure.
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