Invention Grant
- Patent Title: Light emitting diode with a current concentrating structure
- Patent Title (中): 具有电流集中结构的发光二极管
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Application No.: US14054787Application Date: 2013-10-15
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Publication No.: US08823046B2Publication Date: 2014-09-02
- Inventor: Qunfeng Pan , Jyh-Chiarng Wu , Kechuang Lin , Shaohua Huang
- Applicant: Xiamen Sanan Optoelectronics Technology Co., Ltd.
- Applicant Address: CN Xiamen
- Assignee: Xiamen Sanan Optoelectronics Technology Co., Ltd.
- Current Assignee: Xiamen Sanan Optoelectronics Technology Co., Ltd.
- Current Assignee Address: CN Xiamen
- Agency: Syncode LLC
- Agent Feng Ma
- Priority: CN201010590655 20101216
- Main IPC: H01L33/42
- IPC: H01L33/42 ; H01L21/00 ; H01L33/14 ; H01L33/40 ; H01L21/42
Abstract:
A light emitting diode (LED) includes a transparent insulating layer; and at least one transparent conductive oxide layer substantially enclosing the transparent insulating layer, wherein the transparent insulating layer and the at least one transparent conductive oxide layer are configured to distribute a current through the LED more concentrated toward a peripheral region of the LED.
Public/Granted literature
- US20140042485A1 Light Emitting Diode with a Current Concentrating Structure Public/Granted day:2014-02-13
Information query
IPC分类:
