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公开(公告)号：US11309297B2
公开(公告)日：2022-04-19
申请号：US16995551
申请日：2020-08-17
Inventor： Xiaoqiang Zeng , Shaohua Huang , Jianfeng Yang , Canyuan Zhang
Abstract: A light-emitting diode (LED) chip includes a semiconductor epitaxial structure, an insulating substrate, a first metal layer, and a second metal layer. The semiconductor epitaxial structure includes a first semiconductor epitaxial layer, a second semiconductor epitaxial layer, and a light-emitting layer interposed between the first semiconductor epitaxial layer and the second semiconductor epitaxial layer. The insulating substrate has two opposite surfaces, and the first and second metal layers are respectively disposed on the two surfaces of the insulating substrate. An LED device and an LED lamp including the LED chip are also disclosed.
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公开(公告)号：US09202974B2
公开(公告)日：2015-12-01
申请号：US14712867
申请日：2015-05-14
Inventor： Shaohua Huang , Chih-Wei Chao
CPC classification number: H01L33/08 , H01L25/0756 , H01L33/0066 , H01L33/0075 , H01L33/0079 , H01L33/32 , H01L33/36 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2933/0066 , H01L2924/00
Abstract: A double-sided LED has a double-sided light emitting structure formed by electroplating or electrocasting without the need for wire bonding. The double-sided light emitting gives the chip a light-emitting angle of 150 degrees or higher. In addition, the device has good light extraction and heat dissipation characteristics.
Abstract translation: 双面LED具有通过电镀或电铸形成的双面发光结构，而不需要引线接合。 双面发光使芯片的发光角度为150度以上。 此外，该装置具有良好的光提取和散热特性。
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公开(公告)号：US09190569B2
公开(公告)日：2015-11-17
申请号：US14583185
申请日：2014-12-25
Inventor： Xiaoqiang Zeng , Shunping Chen , Qunfeng Pan , Shaohua Huang
CPC classification number: H01L33/20 , H01L27/15 , H01L33/005 , H01L33/145 , H01L33/36 , H01L33/38 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
Abstract: A flip-chip light emitting diode (LED) includes: a substrate having a P-type pad electrode and an N-type pad electrode; a light-emitting epitaxial layer flip-chip mounted over the substrate, including, from top down, an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The n-type semiconductor layer is divided into a light-emitting region, an isolation region, and an electrode region. The light-emitting region and the electrode region are electrically isolated by the isolation region. The active layer and the p-type semiconductor layer are below the light-emitting region. The p-type semiconductor layer connects with the P-type pad electrode. The electrode region of the n-type semiconductor layer connects with the N-type pad electrode. A conductive connection portion on the n-type semiconductor layer connects the electrode region of the n-type semiconductor layer and the light-emitting region, realizing vertical current injection into the light-emitting epitaxial layer when an external power is connected.
Abstract translation: 倒装芯片发光二极管（LED）包括：具有P型焊盘电极和N型焊盘电极的基板; 安装在衬底上的发光外延层倒装芯片，包括从上到下的n型半导体层，有源层和p型半导体层。 n型半导体层被分为发光区域，隔离区域和电极区域。 发光区域和电极区域通过隔离区域电隔离。 有源层和p型半导体层位于发光区域的下方。 p型半导体层与P型焊盘电极连接。 n型半导体层的电极区域与N型焊盘电极连接。 n型半导体层上的导体连接部分连接n型半导体层的电极区域和发光区域，当连接外部电源时实现垂直电流注入发光外延层。
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公开(公告)号：US11990577B2
公开(公告)日：2024-05-21
申请号：US17465075
申请日：2021-09-02
Inventor： Shaohua Huang , Xiaoqiang Zeng , Jianfeng Yang , Canyuan Zhang
IPC: H01L33/62 , H01L25/075 , H01L25/16 , H01L33/64
CPC classification number: H01L33/62 , H01L25/0753 , H01L25/167 , H01L33/647 , H01L2933/0066 , H01L2933/0075
Abstract: A light-emitting device includes a lead frame having a first surface on which a patterned conductive layer is provided, and a light-emitting element. The light-emitting element includes an insulating substrate formed on the first surface, a plurality of light-emitting units formed on the insulating substrate, at least one first electrode, at least one second electrode and at least a pair of bonding wires. The first and second electrodes are respectively placed in electrical connection with a first one and a second one of the light-emitting units, and are disposed outward of the light-emitting units. Each of the pair of bonding wires is disposed to electrically connect a respective one of the first and second electrodes to the patterned conductive layer.
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公开(公告)号：US09397253B2
公开(公告)日：2016-07-19
申请号：US14369930
申请日：2013-01-07
Inventor： Meng-Hsin Yeh , Jyh-Chiarng Wu , Shaohua Huang , Chi-Lun Chou
IPC: H01L21/337 , H01L33/00 , H01L33/32 , H01L33/40 , H01L33/64
CPC classification number: H01L33/0025 , H01L33/0075 , H01L33/32 , H01L33/325 , H01L33/40 , H01L33/64 , H01L2933/0016 , H01L2933/0075
Abstract: Disclosed are a light emitting diode having an n-doped ohm contact buffer layer and a manufacturing method therefor. In the present invention, a highly n-doped ohm contact buffer layer with an electronic concentration up to 1×1018 cm3 is formed on the n side of a light emitting epitaxy layer; when a growth substrate is removed, the n-type ohm contact buffer layer on the surface is exposed, which is a no-nitride polarity-face n-type GaN base material with a lower energy gap; an n-type ohm contact electrode is prepared on the n-type ohm contact buffer layer and follows the Ti/Al ohm contact electrode, which can overcome the problem of the existing vertical gallium nitride-based vertical light emitting diode that the voltage of the thin film GaN base light emitting device is unreliable because the ohm contact electrode on the nitride-face GaN base semiconductor layer is easy to crack due to temperature.
Abstract translation: 公开了具有n掺杂欧姆接触缓冲层的发光二极管及其制造方法。 在本发明中，在发光外延层的n侧形成电子浓度高达1×1018cm 3的高n掺杂欧姆接触缓冲层; 当去除生长衬底时，暴露表面上的n型欧姆接触缓冲层，其是具有较低能隙的无氮化物极性n型GaN基材料; 在n型欧姆接触缓冲层上制备n型欧姆接触电极，并遵循Ti / Al欧姆接触电极，可以克服现有的垂直氮化镓基垂直发光二极管的问题， 由于氮化物面GaN基半导体层上的欧姆接触电极由于温度容易破裂，所以薄膜GaN基发光器件是不可靠的。
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Patent Agency Ranking
公开(公告)号：US09159895B2
公开(公告)日：2015-10-13
申请号：US14394851
申请日：2013-03-19
Inventor： Xiaoqiang Zeng , Shunping Chen , Shaohua Huang , Qunfeng Pan , Jyh-Chiarng Wu
IPC: H01L33/00 , H01L33/62 , H01L25/075 , H01L33/20 , H01L33/44
CPC classification number: H01L33/62 , H01L25/0753 , H01L33/20 , H01L33/44 , H01L2924/0002 , H01L2933/0033 , H01L2924/00
Abstract: A vertical high-voltage light emitting device and a manufacturing method thereof. Polarities of two adjacent light emitting diodes (LEDs) are reversed by means of area laser stripping and die bonding, and the two diodes whose polarities are reversed are disposed on an insulating substrate comprising a bonding metal layer (320). A conductive wire (140) is distributed on a surface of the light emitting device, so that a single LED unit (330) has a vertical structure, and multiple LEDs are connected in series to form a high-voltage LED, thereby solving the problems of low light emitting efficiency and large thermal resistance of a horizontal structure.
Abstract translation: 一种垂直高压发光器件及其制造方法。 两个相邻的发光二极管（LED）的极性通过区域激光剥离和管芯接合而被反转，并且极性反转的两个二极管被布置在包括接合金属层（320）的绝缘基板上。 导电线（140）分布在发光器件的表面上，使得单个LED单元（330）具有垂直结构，并且多个LED串联连接以形成高压LED，从而解决问题 的水平结构的低发光效率和大的热阻。
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公开(公告)号：US20150048379A1
公开(公告)日：2015-02-19
申请号：US14369930
申请日：2013-01-07
Inventor： Meng-Hsin Yeh , Jyh-Chiarng Wu , Shaohua Huang , Chi-Lun Chou
CPC classification number: H01L33/0025 , H01L33/0075 , H01L33/32 , H01L33/325 , H01L33/40 , H01L33/64 , H01L2933/0016 , H01L2933/0075
Abstract: Disclosed are a light emitting diode having an n-doped ohm contact buffer layer and a manufacturing method therefor. In the present invention, a highly n-doped ohm contact buffer layer with an electronic concentration up to 1×1018 cm3 is formed on the n side of a light emitting epitaxy layer; when a growth substrate is removed, the n-type ohm contact buffer layer on the surface is exposed, which is a no-nitride polarity-face n-type GaN base material with a lower energy gap; an n-type ohm contact electrode is prepared on the n-type ohm contact buffer layer and follows the Ti/Al ohm contact electrode, which can overcome the problem of the existing vertical gallium nitride-based vertical light emitting diode that the voltage of the thin film GaN base light emitting device is unreliable because the ohm contact electrode on the nitride-face GaN base semiconductor layer is easy to crack due to temperature.
Abstract translation: 公开了具有n掺杂欧姆接触缓冲层的发光二极管及其制造方法。 在本发明中，在发光外延层的n侧形成电子浓度高达1×1018cm 3的高n掺杂欧姆接触缓冲层; 当去除生长衬底时，暴露表面上的n型欧姆接触缓冲层，其是具有较低能隙的无氮化物极性n型GaN基材料; 在n型欧姆接触缓冲层上制备n型欧姆接触电极，并遵循Ti / Al欧姆接触电极，可以克服现有的垂直氮化镓基垂直发光二极管的问题， 由于氮化物面GaN基半导体层上的欧姆接触电极由于温度容易破裂，所以薄膜GaN基发光器件是不可靠的。
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公开(公告)号：US10559732B2
公开(公告)日：2020-02-11
申请号：US15368599
申请日：2016-12-03
Inventor： Shaohua Huang , Xiaoqiang Zeng , Chih-Wei Chao
Abstract: A surface-mounted light-emitting device is fabricated by epitaxial growth: forming the LED epitaxial structure over a growth substrate through epitaxial growth; chip fabrication: determining P and N electrode regions and an isolating region over the LED epitaxial structure surface and fabricating the P and N electrode pads and the insulator over the P and N electrode regions and the isolating region, wherein the P and N electrode pads have sufficient thicknesses to support the LED epitaxial structure, and the insulator is formed between the P and N electrode pads to prevent the P and N electrode pads from a short circuit; removing the growth substrate and unitizing the LED epitaxial structure to form the chip; and SMT packaging: providing the supporting substrate and directly mounting the P and N electrode pads of the chip over the supporting substrate through SMT packaging to thereby form the surface-mounted LED light-emitting device.
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公开(公告)号：US09537057B2
公开(公告)日：2017-01-03
申请号：US14748701
申请日：2015-06-24
Inventor： Shaohua Huang , Xiaoqiang Zeng , Chih-Wei Chao
CPC classification number: H01L33/62 , H01L33/0079 , H01L33/0095 , H01L33/38 , H01L33/486 , H01L2224/73204 , H01L2933/0016 , H01L2933/0033 , H01L2933/0066 , H01L2933/0091
Abstract: A surface-mounted light-emitting device includes: a LED epitaxial structure having two opposite surfaces, wherein the first surface is a light-emitting surface; P and N electrode pads over the second surface of the epitaxial structure, which have sufficient thickness to support the LED epitaxial structure, and the P and N electrode pads have two opposite surfaces respectively, in which, the first surface is approximate to the LED epitaxial structure; an insulator between the P and N pads to prevent the P and N electrode pads from short circuit; and the P and N electrode pads are directly applied in the SMT package. Some embodiments allow structural changes compared with conventional SMT package type by directly mounting the chip over the supporting substrate through an electrode pad. In addition, soldering is followed after the chip process without package step, which is mainly applicable to flip-chip LED device.
Abstract translation: 表面安装的发光装置包括：具有两个相对表面的LED外延结构，其中第一表面是发光表面; P和N电极焊盘在外延结构的第二表面上，其具有足够的厚度以支撑LED外延结构，并且P和N电极焊盘分别具有两个相对的表面，其中第一表面近似于LED外延 结构体; P和N焊盘之间的绝缘体，以防止P和N电极焊盘短路; 并且P和N电极焊盘直接应用于SMT封装中。 一些实施例通过将芯片直接安装在支撑衬底上通过电极焊盘而允许与常规SMT封装类型相比的结构变化。 另外，芯片处理后没有封装步骤焊接，主要适用于倒装芯片的LED器件。
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公开(公告)号：US09537048B2
公开(公告)日：2017-01-03
申请号：US14402175
申请日：2013-03-21
Inventor： Shunping Chen , Xiaoqiang Zeng , Shaohua Huang , Qunfeng Pan , Jyh-Chiarng Wu
CPC classification number: H01L33/08 , H01L25/0753 , H01L27/15 , H01L33/0079 , H01L33/382 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2933/0066 , H01L2924/00
Abstract: The present invention discloses a vertical AC LED element and fabrication method thereof, wherein the vertical AC LED element comprises a conductive substrate (102); a light-emitting module on the conductive substrate (102), including two horizontally arranged in parallel and mutually-isolated LEDs; wherein the first and second LEDs include a first semiconductor layer (111), a light-emitting layer (112) and a second semiconductor layer (113) from top down; a first insulating layer (131) is arranged between the second semiconductor layer (113) of the first LED and the conductive substrate (102) for mutual isolation; an ohmic contact is formed between the second semiconductor layer (113) of the second LED and the conductive substrate (102); a first conductive structure that connects the first semiconductor layer (111) of the first LED, the second semiconductor layer (113) of the second LED and the conductive substrate (102); and a second conductive structure that connects the second semiconductor layer (113) of the first LED and the first semiconductor layer (111) of the second LED.
Abstract translation: 本发明公开了一种垂直AC LED元件及其制造方法，其中垂直AC LED元件包括导电衬底（102）; 导电基板（102）上的发光模块，包括两个水平布置的并联和相互隔离的LED; 其中所述第一和第二LED包括从上到下的第一半导体层（111），发光层（112）和第二半导体层（113） 第一绝缘层（131）布置在第一LED的第二半导体层（113）和导电基板（102）之间以进行相互隔离; 在第二LED的第二半导体层（113）和导电基板（102）之间形成欧姆接触; 连接第一LED的第一半导体层（111），第二LED的第二半导体层（113）和导电基板（102）的第一导电结构; 以及连接第一LED的第二半导体层（113）和第二LED的第一半导体层（111）的第二导电结构。
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