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公开(公告)号：US09397253B2
公开(公告)日：2016-07-19
申请号：US14369930
申请日：2013-01-07
Inventor： Meng-Hsin Yeh , Jyh-Chiarng Wu , Shaohua Huang , Chi-Lun Chou
IPC: H01L21/337 , H01L33/00 , H01L33/32 , H01L33/40 , H01L33/64
CPC classification number: H01L33/0025 , H01L33/0075 , H01L33/32 , H01L33/325 , H01L33/40 , H01L33/64 , H01L2933/0016 , H01L2933/0075
Abstract: Disclosed are a light emitting diode having an n-doped ohm contact buffer layer and a manufacturing method therefor. In the present invention, a highly n-doped ohm contact buffer layer with an electronic concentration up to 1×1018 cm3 is formed on the n side of a light emitting epitaxy layer; when a growth substrate is removed, the n-type ohm contact buffer layer on the surface is exposed, which is a no-nitride polarity-face n-type GaN base material with a lower energy gap; an n-type ohm contact electrode is prepared on the n-type ohm contact buffer layer and follows the Ti/Al ohm contact electrode, which can overcome the problem of the existing vertical gallium nitride-based vertical light emitting diode that the voltage of the thin film GaN base light emitting device is unreliable because the ohm contact electrode on the nitride-face GaN base semiconductor layer is easy to crack due to temperature.
Abstract translation: 公开了具有n掺杂欧姆接触缓冲层的发光二极管及其制造方法。 在本发明中，在发光外延层的n侧形成电子浓度高达1×1018cm 3的高n掺杂欧姆接触缓冲层; 当去除生长衬底时，暴露表面上的n型欧姆接触缓冲层，其是具有较低能隙的无氮化物极性n型GaN基材料; 在n型欧姆接触缓冲层上制备n型欧姆接触电极，并遵循Ti / Al欧姆接触电极，可以克服现有的垂直氮化镓基垂直发光二极管的问题， 由于氮化物面GaN基半导体层上的欧姆接触电极由于温度容易破裂，所以薄膜GaN基发光器件是不可靠的。
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公开(公告)号：US09159895B2
公开(公告)日：2015-10-13
申请号：US14394851
申请日：2013-03-19
Inventor： Xiaoqiang Zeng , Shunping Chen , Shaohua Huang , Qunfeng Pan , Jyh-Chiarng Wu
IPC: H01L33/00 , H01L33/62 , H01L25/075 , H01L33/20 , H01L33/44
CPC classification number: H01L33/62 , H01L25/0753 , H01L33/20 , H01L33/44 , H01L2924/0002 , H01L2933/0033 , H01L2924/00
Abstract: A vertical high-voltage light emitting device and a manufacturing method thereof. Polarities of two adjacent light emitting diodes (LEDs) are reversed by means of area laser stripping and die bonding, and the two diodes whose polarities are reversed are disposed on an insulating substrate comprising a bonding metal layer (320). A conductive wire (140) is distributed on a surface of the light emitting device, so that a single LED unit (330) has a vertical structure, and multiple LEDs are connected in series to form a high-voltage LED, thereby solving the problems of low light emitting efficiency and large thermal resistance of a horizontal structure.
Abstract translation: 一种垂直高压发光器件及其制造方法。 两个相邻的发光二极管（LED）的极性通过区域激光剥离和管芯接合而被反转，并且极性反转的两个二极管被布置在包括接合金属层（320）的绝缘基板上。 导电线（140）分布在发光器件的表面上，使得单个LED单元（330）具有垂直结构，并且多个LED串联连接以形成高压LED，从而解决问题 的水平结构的低发光效率和大的热阻。
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公开(公告)号：US20150048379A1
公开(公告)日：2015-02-19
申请号：US14369930
申请日：2013-01-07
Inventor： Meng-Hsin Yeh , Jyh-Chiarng Wu , Shaohua Huang , Chi-Lun Chou
CPC classification number: H01L33/0025 , H01L33/0075 , H01L33/32 , H01L33/325 , H01L33/40 , H01L33/64 , H01L2933/0016 , H01L2933/0075
Abstract: Disclosed are a light emitting diode having an n-doped ohm contact buffer layer and a manufacturing method therefor. In the present invention, a highly n-doped ohm contact buffer layer with an electronic concentration up to 1×1018 cm3 is formed on the n side of a light emitting epitaxy layer; when a growth substrate is removed, the n-type ohm contact buffer layer on the surface is exposed, which is a no-nitride polarity-face n-type GaN base material with a lower energy gap; an n-type ohm contact electrode is prepared on the n-type ohm contact buffer layer and follows the Ti/Al ohm contact electrode, which can overcome the problem of the existing vertical gallium nitride-based vertical light emitting diode that the voltage of the thin film GaN base light emitting device is unreliable because the ohm contact electrode on the nitride-face GaN base semiconductor layer is easy to crack due to temperature.
Abstract translation: 公开了具有n掺杂欧姆接触缓冲层的发光二极管及其制造方法。 在本发明中，在发光外延层的n侧形成电子浓度高达1×1018cm 3的高n掺杂欧姆接触缓冲层; 当去除生长衬底时，暴露表面上的n型欧姆接触缓冲层，其是具有较低能隙的无氮化物极性n型GaN基材料; 在n型欧姆接触缓冲层上制备n型欧姆接触电极，并遵循Ti / Al欧姆接触电极，可以克服现有的垂直氮化镓基垂直发光二极管的问题， 由于氮化物面GaN基半导体层上的欧姆接触电极由于温度容易破裂，所以薄膜GaN基发光器件是不可靠的。
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公开(公告)号：US09728670B2
公开(公告)日：2017-08-08
申请号：US14395631
申请日：2013-03-19
Inventor： Shaohua Huang , Jyh-Chiarng Wu
CPC classification number: H01L33/002 , H01L33/0079 , H01L33/025 , H01L33/12 , H01L33/14
Abstract: Disclosed is a light-emitting diode with an n-type graded buffer layer and a manufacturing method therefor. An epitaxial structure of a light-emitting diode comprises: a growth substrate; an n-type graded buffer layer located on the growth substrate; an n-type limiting layer (231) located on the n-type graded buffer layer; an active layer (232) located on the n-type limiting layer (231); and a p-type limiting layer (233) located on the active layer (232). A buffer layer is converted into an n-type graded buffer layer by means of an ion implantation method, and is applied to a light-emitting diode chip of a vertical structure while ensuring that a high-quality epitaxial structure is obtained, thereby being able to effectively reduce the contact resistance.
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公开(公告)号：US09705033B2
公开(公告)日：2017-07-11
申请号：US14531973
申请日：2014-11-03
Inventor： Meng-Hsin Yeh , Jyh-Chiarng Wu
CPC classification number: H01L33/14 , H01L33/0025 , H01L33/007 , H01L33/0075 , H01L33/0079 , H01L33/06 , H01L33/145 , H01L33/325
Abstract: A lighting emitting diode including: an n side layer and a p side layer formed by nitride semiconductors respectively; an active layer comprising a nitride semiconductor is between the n side layer and the p side layer; wherein, the n-side layer is successively laminated by an extrinsically-doped buffer layer and a compound multi-current spreading layer; the compound multi-current spreading layer is successively-laminated by a first current spreading layer, a second current spreading layer and a third current spreading layer; the first current spreading layer and the third current spreading layer are alternatively-laminated layers comprising a u-type nitride semiconductor layer and an n-type nitride semiconductor layer; the second current spreading layer is a distributed insulation layer formed on the n-type nitride semiconductor layer; and the first current spreading layer is adjacent to the extrinsically-doped buffer layer; and the third current spreading layer is adjacent to the active layer.
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Patent Agency Ranking
公开(公告)号：US08823046B2
公开(公告)日：2014-09-02
申请号：US14054787
申请日：2013-10-15
Inventor： Qunfeng Pan , Jyh-Chiarng Wu , Kechuang Lin , Shaohua Huang
CPC classification number: H01L33/42 , H01L21/42 , H01L33/145 , H01L33/40
Abstract: A light emitting diode (LED) includes a transparent insulating layer; and at least one transparent conductive oxide layer substantially enclosing the transparent insulating layer, wherein the transparent insulating layer and the at least one transparent conductive oxide layer are configured to distribute a current through the LED more concentrated toward a peripheral region of the LED.
Abstract translation: 发光二极管（LED）包括透明绝缘层; 以及基本上包围透明绝缘层的至少一个透明导电氧化物层，其中所述透明绝缘层和所述至少一个透明导电氧化物层被配置为将通过所述LED的电流分配成更集中于所述LED的外围区域。
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公开(公告)号：US09537048B2
公开(公告)日：2017-01-03
申请号：US14402175
申请日：2013-03-21
Inventor： Shunping Chen , Xiaoqiang Zeng , Shaohua Huang , Qunfeng Pan , Jyh-Chiarng Wu
CPC classification number: H01L33/08 , H01L25/0753 , H01L27/15 , H01L33/0079 , H01L33/382 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2933/0066 , H01L2924/00
Abstract: The present invention discloses a vertical AC LED element and fabrication method thereof, wherein the vertical AC LED element comprises a conductive substrate (102); a light-emitting module on the conductive substrate (102), including two horizontally arranged in parallel and mutually-isolated LEDs; wherein the first and second LEDs include a first semiconductor layer (111), a light-emitting layer (112) and a second semiconductor layer (113) from top down; a first insulating layer (131) is arranged between the second semiconductor layer (113) of the first LED and the conductive substrate (102) for mutual isolation; an ohmic contact is formed between the second semiconductor layer (113) of the second LED and the conductive substrate (102); a first conductive structure that connects the first semiconductor layer (111) of the first LED, the second semiconductor layer (113) of the second LED and the conductive substrate (102); and a second conductive structure that connects the second semiconductor layer (113) of the first LED and the first semiconductor layer (111) of the second LED.
Abstract translation: 本发明公开了一种垂直AC LED元件及其制造方法，其中垂直AC LED元件包括导电衬底（102）; 导电基板（102）上的发光模块，包括两个水平布置的并联和相互隔离的LED; 其中所述第一和第二LED包括从上到下的第一半导体层（111），发光层（112）和第二半导体层（113） 第一绝缘层（131）布置在第一LED的第二半导体层（113）和导电基板（102）之间以进行相互隔离; 在第二LED的第二半导体层（113）和导电基板（102）之间形成欧姆接触; 连接第一LED的第一半导体层（111），第二LED的第二半导体层（113）和导电基板（102）的第一导电结构; 以及连接第一LED的第二半导体层（113）和第二LED的第一半导体层（111）的第二导电结构。
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8.发明授权公开(公告)号：US09324907B2
公开(公告)日：2016-04-26
申请号：US13743728
申请日：2013-01-17
Inventor： Meng-Hsin Yeh , Jyh-Chiarng Wu , Guojun Lu
CPC classification number: H01L33/06 , H01L21/02507 , H01L29/15 , H01L33/007 , H01L33/0075
Abstract: A light emitting diode (LED) includes an active layer having one or more multilayer potential barriers and at least one well layer. Each multilayer potential barrier includes interlacing first and second InAlGaN thin layers. The first and second InAlGaN thin layers have compositions selected with respect to the well layer such that a polarization effect is substantially reduced.
Abstract translation: 发光二极管（LED）包括具有一个或多个多层势垒和至少一个阱层的有源层。 每个多层势垒包括隔行的第一和第二InAlGaN薄层。 第一和第二InAlGaN薄层具有相对于阱层选择的组成，使得极化效应显着降低。
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公开(公告)号：US20150144974A1
公开(公告)日：2015-05-28
申请号：US14402175
申请日：2013-03-21
Inventor： Shunping Chen , Xiaoqiang Zeng , Shaohua Huang , Qunfeng Pan , Jyh-Chiarng Wu
CPC classification number: H01L33/08 , H01L25/0753 , H01L27/15 , H01L33/0079 , H01L33/382 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2933/0066 , H01L2924/00
Abstract: The present invention discloses a vertical AC LED element and fabrication method thereof, wherein the vertical AC LED element comprises a conductive substrate (102); a light-emitting module on the conductive substrate (102), including two horizontally arranged in parallel and mutually-isolated LEDs; wherein the first and second LEDs include a first semiconductor layer (111), a light-emitting layer (112) and a second semiconductor layer (113) from top down; a first insulating layer (131) is arranged between the second semiconductor layer (113) of the first LED and the conductive substrate (102) for mutual isolation; an ohmic contact is formed between the second semiconductor layer (113) of the second LED and the conductive substrate (102); a first conductive structure that connects the first semiconductor layer (111) of the first LED, the second semiconductor layer (113) of the second LED and the conductive substrate (102); and a second conductive structure that connects the second semiconductor layer (113) of the first LED and the first semiconductor layer (111) of the second LED.
Abstract translation: 本发明公开了一种垂直AC LED元件及其制造方法，其中垂直AC LED元件包括导电衬底（102）; 导电基板（102）上的发光模块，包括两个水平布置的并联和相互隔离的LED; 其中所述第一和第二LED包括从上到下的第一半导体层（111），发光层（112）和第二半导体层（113） 第一绝缘层（131）布置在第一LED的第二半导体层（113）和导电基板（102）之间以进行相互隔离; 在第二LED的第二半导体层（113）和导电基板（102）之间形成欧姆接触; 连接第一LED的第一半导体层（111），第二LED的第二半导体层（113）和导电基板（102）的第一导电结构; 以及连接第一LED的第二半导体层（113）和第二LED的第一半导体层（111）的第二导电结构。
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公开(公告)号：US20150084088A1
公开(公告)日：2015-03-26
申请号：US14395631
申请日：2013-03-19
Inventor： Shaohua Huang , Jyh-Chiarng Wu
CPC classification number: H01L33/002 , H01L33/0079 , H01L33/025 , H01L33/12 , H01L33/14
Abstract: Disclosed is a light-emitting diode with an n-type graded buffer layer and a manufacturing method therefor. An epitaxial structure of a light-emitting diode comprises: a growth substrate; an n-type graded buffer layer located on the growth substrate; an n-type limiting layer (231) located on the n-type graded buffer layer; an active layer (232) located on the n-type limiting layer (231); and a p-type limiting layer (233) located on the active layer (232). A buffer layer is converted into an n-type graded buffer layer by means of an ion implantation method, and is applied to a light-emitting diode chip of a vertical structure while ensuring that a high-quality epitaxial structure is obtained, thereby being able to effectively reduce the contact resistance.
Abstract translation: 公开了具有n型渐变缓冲层的发光二极管及其制造方法。 发光二极管的外延结构包括：生长衬底; 位于生长衬底上的n型渐变缓冲层; 位于n型渐变缓冲层上的n型限制层（231）; 位于所述n型限制层（231）上的有源层（232）; 和位于有源层（232）上的p型限制层（233）。 通过离子注入法将缓冲层转换成n型渐变缓冲层，并且将其应用于垂直结构的发光二极管芯片，同时确保获得高质量的外延结构，从而能够 有效降低接触电阻。
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