发明授权
- 专利标题： Method for fabricating a DRAM capacitor
- 专利标题（中）： 制造DRAM电容器的方法
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申请号： US13153626申请日： 2011-06-06
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公开(公告)号： US08828836B2公开(公告)日： 2014-09-09
- 发明人: Karthik Ramani , Hiroyuki Ode , Sandra Malhotra
- 申请人： Karthik Ramani , Hiroyuki Ode , Sandra Malhotra
- 申请人地址： US CA San Jose JP Tokyo
- 专利权人： Intermolecular, Inc.,Elpida Memory, Inc.
- 当前专利权人： Intermolecular, Inc.,Elpida Memory, Inc.
- 当前专利权人地址： US CA San Jose JP Tokyo
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L49/02 ; H01L29/92
摘要：
A method for fabricating a dynamic random access memory (DRAM) capacitor stack is disclosed wherein the stack includes a first electrode, a dielectric layer, and a second electrode. The first electrode is formed from a conductive binary metal. A dielectric layer is formed over the first electrode. The dielectric layer is subjected to a milliseconds anneal process that serves to crystallize the dielectric material and decrease the concentration of oxygen vacancies.
公开/授权文献
- US20120309160A1 METHOD FOR FABRICATING A DRAM CAPACITOR 公开/授权日：2012-12-06
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