发明授权
- 专利标题: Capacitive position sensor
- 专利标题(中): 电容位置传感器
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申请号: US12421713申请日: 2009-04-10
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公开(公告)号: US08830180B2公开(公告)日: 2014-09-09
- 发明人: Esat Yilmaz , Peter Sleeman , Samuel Brunet , Matthew Trend , Harald Philipp
- 申请人: Esat Yilmaz , Peter Sleeman , Samuel Brunet , Matthew Trend , Harald Philipp
- 申请人地址: US CA San Jose
- 专利权人: Atmel Corporation
- 当前专利权人: Atmel Corporation
- 当前专利权人地址: US CA San Jose
- 代理机构: Baker Botts LLP
- 主分类号: G06F3/041
- IPC分类号: G06F3/041
摘要:
A capacitive position sensor has a two-layer electrode structure. Drive electrodes extending in a first direction on a first plane on one side of a substrate. Sense electrodes extend in a second direction on a second plane on the other side of the substrate so that the sense electrodes cross the drive electrodes at a plurality of intersections which collectively form a position sensing array. The sense electrodes are provided with branches extending in the first direction part of the way towards each adjacent sense electrode so that end portions of the branches of adjacent sense electrodes co-extend with each other in the first direction separated by a distance sufficiently small that capacitive coupling to the drive electrode adjacent to the co-extending portion is reduced. Providing sense electrode branches allow a sensor to be made which has a greater extent in the first direction for a given number of sense channels, since the co-extending portions provide an interpolating effect. The number of sense electrode branches per drive electrode can be increased which allows a sensor to be made which has ever greater extent in the first direction without having to increase the number of sense channels.
公开/授权文献
- US20100045632A1 Capacitive Position Sensor 公开/授权日:2010-02-25
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