发明授权
US08835200B2 High light extraction efficiency nitride based light emitting diode by surface roughening
有权
高光提取效率氮化物基发光二极管通过表面粗糙化
- 专利标题： High light extraction efficiency nitride based light emitting diode by surface roughening
- 专利标题（中）： 高光提取效率氮化物基发光二极管通过表面粗糙化
-
申请号： US13349342申请日： 2012-01-12
-
公开(公告)号： US08835200B2公开(公告)日： 2014-09-16
- 发明人: Hong Zhong , Anurag Tyagi , Kenneth J. Vampola , James S. Speck , Steven P. DenBaars , Shuji Nakamura
- 申请人： Hong Zhong , Anurag Tyagi , Kenneth J. Vampola , James S. Speck , Steven P. DenBaars , Shuji Nakamura
- 申请人地址： US CA Oakland
- 专利权人： The Regents of the University of California
- 当前专利权人： The Regents of the University of California
- 当前专利权人地址： US CA Oakland
- 代理机构： Gates & Cooper LLP
- 主分类号： H01L33/32
- IPC分类号： H01L33/32 ; H01L21/02
摘要：
A III-nitride light emitting diode (LED) and method of fabricating the same, wherein at least one surface of a semipolar or nonpolar plane of a III-nitride layer of the LED is textured, thereby forming a textured surface in order to increase light extraction. The texturing may be performed by plasma assisted chemical etching, photolithography followed by etching, or nano-imprinting followed by etching.
公开/授权文献
信息查询
IPC分类:
