发明授权
- 专利标题: Methods of forming contacts for nanowire field effect transistors
- 专利标题(中): 形成纳米线场效应晶体管接触的方法
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申请号: US12856718申请日: 2010-08-16
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公开(公告)号: US08835231B2公开(公告)日: 2014-09-16
- 发明人: Sarunya Bangsaruntip , Guy M. Cohen , Shreesh Narasimha , Jeffrey W. Sleight
- 申请人: Sarunya Bangsaruntip , Guy M. Cohen , Shreesh Narasimha , Jeffrey W. Sleight
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Cantor Colburn LLP
- 代理商 Vazken Alexanian
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; H01L21/84 ; H01L29/775 ; H01L29/06 ; H01L29/423 ; B82Y10/00 ; B82Y40/00 ; H01L29/786 ; H01L29/66 ; H01L21/8234 ; H01L27/12
摘要:
A method for forming a nanowire field effect transistor (FET) device includes forming a nanowire over a semiconductor substrate, forming a gate stack around a portion of the nanowire, forming a capping layer on the gate stack, forming a spacer adjacent to sidewalls of the gate stack and around portions of nanowire extending from the gate stack, forming a hardmask layer on the capping layer and the first spacer, forming a metallic layer over the exposed portions of the device, depositing a conductive material over the metallic layer, removing the hardmask layer from the gate stack, and removing portions of the conductive material to define a source region contact and a drain region contact.
公开/授权文献
- US20120037880A1 Contacts for Nanowire Field Effect Transistors 公开/授权日:2012-02-16