发明授权
- 专利标题: Semiconductor device comprising self-aligned contact elements
- 专利标题(中): 包括自对准接触元件的半导体器件
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申请号: US13372604申请日: 2012-02-14
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公开(公告)号: US08835245B2公开(公告)日: 2014-09-16
- 发明人: Peter Baars , Till Schloesser , Frank Jakubowski , Andy Wei , Richard Carter , Matthias Schaller
- 申请人: Peter Baars , Till Schloesser , Frank Jakubowski , Andy Wei , Richard Carter , Matthias Schaller
- 申请人地址: KY Grand Cayman
- 专利权人: GLOBALFOUNDRIES Inc.
- 当前专利权人: GLOBALFOUNDRIES Inc.
- 当前专利权人地址: KY Grand Cayman
- 代理机构: Amerson Law Firm, PLLC
- 优先权: DE102011004323 20110217
- 主分类号: H01L21/8234
- IPC分类号: H01L21/8234 ; H01L21/768 ; H01L21/285 ; H01L29/66 ; H01L29/78
摘要:
When forming sophisticated semiconductor devices, a replacement gate approach may be applied in combination with a self-aligned contact regime by forming the self-aligned contacts prior to replacing the placeholder material of the gate electrode structures.
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