发明授权
- 专利标题： Electronic component manufacturing method including step of embedding metal film
- 专利标题（中）： 电子元件制造方法，包括嵌入金属膜的步骤
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申请号： US13163989申请日： 2011-06-20
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公开(公告)号： US08835296B2公开(公告)日： 2014-09-16
- 发明人: Shunichi Wakayanagi , Takayuki Saito , Takuya Seino , Akira Matsuo , Koji Yamazaki , Eitaro Morimoto , Yohsuke Shibuya , Yu Sato , Naomu Kitano
- 申请人： Shunichi Wakayanagi , Takayuki Saito , Takuya Seino , Akira Matsuo , Koji Yamazaki , Eitaro Morimoto , Yohsuke Shibuya , Yu Sato , Naomu Kitano
- 申请人地址： JP Kawasaki-shi
- 专利权人： Canon Anelva Corporation
- 当前专利权人： Canon Anelva Corporation
- 当前专利权人地址： JP Kawasaki-shi
- 代理机构： Fitzpatrick, Cella, Harper & Scinto
- 优先权： JP2010-294009 20101228
- 主分类号： H01L29/45
- IPC分类号： H01L29/45 ; H01L21/285
摘要：
The present invention provides an electronic component manufacturing method including a step of embedding a metal film. An embodiment of the present invention includes a first step of depositing a barrier layer containing titanium nitride on an object to be processed on which a concave part is formed and a second step of filling a low-melting-point metal directly on the barrier layer under a temperature condition allowing the low-melting-point metal to flow, by a PCM sputtering method while forming a magnetic field by a magnet unit including plural magnets which are arranged at grid points of a polygonal grid so as to have different polarities between the neighboring magnets.
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