Invention Grant
- Patent Title: Shared-diffusion standard cell architecture
- Patent Title (中): 共享扩散标准单元架构
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Application No.: US13671114Application Date: 2012-11-07
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Publication No.: US08836040B2Publication Date: 2014-09-16
- Inventor: Pratyush Kamal , Esin Terzioglu , Foua Vang , Prayag Bhanubhai Patel , Giridhar Nallapati , Animesh Datta
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Paul S. Holdaway
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L21/8238 ; H01L29/66 ; H01L27/118 ; H01L27/02 ; H01L27/092

Abstract:
A semiconductor standard cell includes an N-type diffusion area and a P-type diffusion area, both extending across the cell and also outside of the cell. The cell also includes a conductive gate above each diffusion area to create a semiconductive device. A pair of dummy gates are also above the N-type diffusion area and the P-type diffusion area creating a pair of dummy devices. The pair of dummy gates are disposed at opposite edges of the cell. The cell further includes a first conductive line configured to couple the dummy devices to power for disabling the dummy devices.
Public/Granted literature
- US20140124868A1 SHARED-DIFFUSION STANDARD CELL ARCHITECTURE Public/Granted day:2014-05-08
Information query
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