发明授权
US08841648B2 Multi-level memory arrays with memory cells that employ bipolar storage elements and methods of forming the same
有权
具有使用双极存储元件的存储器单元的多级存储器阵列及其形成方法
- 专利标题： Multi-level memory arrays with memory cells that employ bipolar storage elements and methods of forming the same
- 专利标题（中）： 具有使用双极存储元件的存储器单元的多级存储器阵列及其形成方法
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申请号： US12904802申请日： 2010-10-14
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公开(公告)号： US08841648B2公开(公告)日： 2014-09-23
- 发明人: Yung-Tin Chen , Andrei Mihnea , Roy E. Scheuerlein , Luca Fasoli
- 申请人： Yung-Tin Chen , Andrei Mihnea , Roy E. Scheuerlein , Luca Fasoli
- 申请人地址： US CA Milpitas
- 专利权人： SanDisk 3D LLC
- 当前专利权人： SanDisk 3D LLC
- 当前专利权人地址： US CA Milpitas
- 代理机构： Vierra Magen Marcus LLP
- 主分类号： H01L47/00
- IPC分类号： H01L47/00 ; H01L45/00 ; H01L27/24 ; G11C13/00 ; G11C11/56
摘要：
In some embodiments, a memory array is provided that includes (1) a first memory cell having (a) a first conductive line; (b) a first bipolar storage element formed above the first conductive line; and (c) a second conductive line formed above the first bipolar storage element; and (2) a second memory cell formed above the first memory cell and having (a) a second bipolar storage element formed above the second conductive line; and (b) a third conductive line formed above the second bipolar storage element. The first and second memory cells share the second conductive line; the first bipolar storage element has a first storage element polarity orientation within the first memory cell; the second bipolar storage element has a second storage element polarity orientation within the second memory cell; and the second storage element polarity orientation is opposite the first storage element polarity orientation. Numerous other aspects are provided.
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