发明授权
US08841723B2 LDMOS device having increased punch-through voltage and method for making same
有权
具有增加穿通电压的LDMOS器件及其制造方法
- 专利标题： LDMOS device having increased punch-through voltage and method for making same
- 专利标题（中）： 具有增加穿通电压的LDMOS器件及其制造方法
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申请号： US12720834申请日： 2010-03-10
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公开(公告)号： US08841723B2公开(公告)日： 2014-09-23
- 发明人: Tsung-Yi Huang , Huan-Ping Chu , Ching-Yao Yang , Hung-Der Su
- 申请人： Tsung-Yi Huang , Huan-Ping Chu , Ching-Yao Yang , Hung-Der Su
- 申请人地址： TW Hsinchu
- 专利权人： Richtek Technology Corporation, R.O.C.
- 当前专利权人： Richtek Technology Corporation, R.O.C.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Tung & Associates
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L29/08 ; H01L29/78
摘要：
The present invention discloses an LDMOS device having an increased punch-through voltage and a method for making same. The LDMOS device includes: a substrate; a well of a first conductive type formed in the substrate; an isolation region formed in the substrate; a body region of a second conductive type in the well; a source in the body region; a drain in the well; a gate structure on the substrate; and a first conductive type dopant region beneath the body region, for increasing a punch-through voltage.
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