发明授权
- 专利标题： Bonded structure employing metal semiconductor alloy bonding
- 专利标题（中）： 使用金属半导体合金结合的结合结构
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申请号： US12685954申请日： 2010-01-12
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公开(公告)号： US08841777B2公开(公告)日： 2014-09-23
- 发明人: Mukta G. Farooq , Zhengwen Li , Zhijiong Luo , Huilong Zhu
- 申请人： Mukta G. Farooq , Zhengwen Li , Zhijiong Luo , Huilong Zhu
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Catherine Ivers
- 主分类号： H01L21/48
- IPC分类号： H01L21/48 ; H01L21/52 ; H01L21/40 ; H01L21/20 ; H01L27/06 ; H01L21/768
摘要：
Vertical stacks of a metal portion and a semiconductor portion formed on a first substrate are brought into physical contact with vertical stacks of a metal portion and a semiconductor portion formed on a second substrate. Alternately, vertical stacks of a metal portion and a semiconductor portion formed on a first substrate are brought into physical contact with metal portions formed on a second substrate. The assembly of the first and second substrates is subjected to an anneal at a temperature that induces formation of a metal semiconductor alloy derived from the semiconductor portions and the metal portions. The first substrate and the second substrate are bonded through metal semiconductor alloy portions that adhere to the first and second substrates.
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